power management component Shenzhen ruichips Semicon RU3020H N Channel Power MOSFET with 30V 12A rating
Key Attributes
Model Number:
RU3020H
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
21mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 N-channel
Input Capacitance(Ciss):
980pF
Output Capacitance(Coss):
160pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
RU3020H
Package:
SOP-8
Product Description
Product Overview
The RU3020H is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed with a Super High Dense Cell structure for reliability and ruggedness. It offers a 30V drain-source voltage and a continuous drain current of 12A, with low on-state resistance of 9.5m (Typ.) at VGS=10V. This MOSFET is 100% avalanche tested and available in lead-free and green options, making it suitable for power management applications.
Product Attributes
- Brand: Ruichips Semiconductor
- Model: RU3020H
- Origin: CHINA
- Certifications: Lead Free and Green Available
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| Common Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Maximum Junction Temperature (TJ) | 150 | C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | C | ||
| Diode Continuous Forward Current (IS) | TC=25C | 12 | A | ||
| Pulse Drain Current (IDP) | 300s Pulse, TC=25C | 48 | A | ||
| Continuous Drain Current (ID) | VGS=10V, TC=25C | 12 | A | ||
| Continuous Drain Current (ID) | VGS=10V, TC=70C | 9.6 | A | ||
| Maximum Power Dissipation (PD) | TC=25C | 2.5 | W | ||
| Maximum Power Dissipation (PD) | TC=70C | 1.6 | W | ||
| Avalanche Energy, Single Pulsed (EAS) | 105 | mJ | |||
| Static Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | TJ=85C | 30 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1.0 | 2.5 | V | |
| Gate Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=10A | 9.5 | 15 | m | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, IDS=8A | 15 | 21 | m | |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | ISD=12A, VGS=0V | 1.2 | V | ||
| Reverse Recovery Time (trr) | ISD=12A, dlSD/dt=100A/s | 20 | ns | ||
| Reverse Recovery Charge (Qrr) | ISD=12A, dlSD/dt=100A/s | 12 | nC | ||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 1.2 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=15V, Frequency=1.0MHz | 980 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=15V, Frequency=1.0MHz | 160 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=15V, Frequency=1.0MHz | 120 | pF | ||
| Turn-on Delay Time (td(ON)) | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 12 | ns | ||
| Turn-on Rise Time (tr) | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 19 | ns | ||
| Turn-off Delay Time (td(OFF)) | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 34 | ns | ||
| Turn-off Fall Time (tf) | VDD=15V, RL=30, IDS=12A, VGEN=10V, RG=6 | 16 | ns | ||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=15V, VGS=10V, IDS=12A | 19 | 25 | nC | |
| Gate-Source Charge (Qgs) | VDS=15V, VGS=10V, IDS=12A | ||||
| Gate-Drain Charge (Qgd) | VDS=15V, VGS=10V, IDS=12A | 7 | nC | ||
Applications
Power Management in Notebook Computers, and DC-DC Converters in Networking Systems.
2409302202_Shenzhen-ruichips-Semicon-RU3020H_C181986.pdf
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