Durable Shenzhen ruichips Semicon RU60E25L N Channel Power MOSFET ideal for power management systems
Key Attributes
Model Number:
RU60E25L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25A
RDS(on):
65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.7V@250uA
Number:
1 N-channel
Output Capacitance(Coss):
285pF
Input Capacitance(Ciss):
1.34nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
RU60E25L
Package:
TO-252
Product Description
RU60E25L N-Channel Advanced Power MOSFET
The RU60E25L is an N-Channel Advanced Power MOSFET designed for power management applications. It features a super high-density cell design, ESD protection, and is reliable and rugged. This device is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Unit | Min. | Typ. | Max. |
| VDSS | Drain-Source Voltage | V | 60 | |||
| VGSS | Gate-Source Voltage | ±V | 20 | |||
| TJ | Maximum Junction Temperature | °C | 175 | |||
| TSTG | Storage Temperature Range | °C | -55 | 175 | ||
| ID | Continuous Drain Current (VGS=10V) | TC=25°C | A | 25‡† | ||
| ID | Continuous Drain Current (VGS=10V) | TC=100°C | A | 19 | ||
| IDP | 300μs Pulse Drain Current | TC=25°C | A | 100† | ||
| PD | Maximum Power Dissipation | TC=25°C | W | 50 | ||
| PD | Maximum Power Dissipation | TC=100°C | W | 25 | ||
| RθJC | Thermal Resistance-Junction to Case | °C/W | 3 | |||
| EAS | Avalanche Energy, Single Pulsed | ‡ | mJ | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250μA | V | 60 | ||
| IDSS | Zero Gate Voltage Drain Current | VDS= 60V, VGS=0V | μA | 1 | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85°C | μA | 30 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | V | 1.5 | 2 | 2.7 |
| IGSS | Gate Leakage Current | VGS=±16V, VDS=0V | μA | ±10 | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS= 10V, IDS=25A | mΩ | 35 | 40 | |
| RDS(ON) | Drain-Source On-state Resistance | VGS= 4.5V, IDS=17A | mΩ | 42 | 65 | |
| VSD | Diode Forward Voltage | ISD=25A, VGS=0V | V | 0.8 | 1.2 | |
| trr | Reverse Recovery Time | ISD=25A, dlSD/dt=100A/μs | ns | 40 | ||
| Qrr | Reverse Recovery Charge | ISD=25A, dlSD/dt=100A/μs | nC | 70 | ||
| Ciss | Input Capacitance | VGS=0V, VDS= 30V, Frequency=1.0MHz | pF | 1340 | ||
| Coss | Output Capacitance | VGS=0V, VDS= 30V, Frequency=1.0MHz | pF | 285 | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS= 30V, Frequency=1.0MHz | pF | 90 | ||
| td(ON) | Turn-on Delay Time | VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω | ns | 10 | ||
| tr | Turn-on Rise Time | VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω | ns | 13 | ||
| td(OFF) | Turn-off Delay Time | VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω | ns | 28 | ||
| tf | Turn-off Fall Time | VDD=30V, RL=2.4Ω, IDS=25A, VGEN= 10V, RG=6Ω | ns | 15 | ||
| Qg | Total Gate Charge | VDS=48V, VGS= 10V, IDS=25A | nC | 55 | ||
| Qgs | Gate-Source Charge | VDS=48V, VGS= 10V, IDS=25A | nC | 8 | ||
| Qgd | Gate-Drain Charge | VDS=48V, VGS= 10V, IDS=25A | nC | 28 |
2409302202_Shenzhen-ruichips-Semicon-RU60E25L_C181991.pdf
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