Complementary MOSFET device Siliup SP1049CP8 with 100V drain source voltage and SOP8L lead free package
Key Attributes
Model Number:
SP1049CP8
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@10V;90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA;1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF;68pF
Number:
-
Output Capacitance(Coss):
109pF;81pF
Input Capacitance(Ciss):
2.605nF;2.41nF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
17nC@10V;21nC@10V
Mfr. Part #:
SP1049CP8
Package:
SOP-8
Product Description
Product Overview
The SP1049CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Package: SOP-8L
- Certifications: Lead free product acquired
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Units |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 100V | -100V | V | ||
| RDS(on) Typ | RDS(on) | VGS=10V | 40m | VGS=-10V | 90m | m |
| VGS=4.5V | 45m | VGS=-4.5V | 100m | |||
| ID | ID | 6A | -6A | A | ||
| Device Code | 1049C | |||||
| Continuous Drain Current (N-Channel) | ID | Ta=25 | 6 A | A | ||
| Continuous Drain Current (P-Channel) | ID | Ta=25 | -6 A | A | ||
| Pulsed Drain Current (N-Channel) | IDM | Ta=25 | 24 A | A | ||
| Pulsed Drain Current (P-Channel) | IDM | Ta=25 | -24 A | A | ||
| Single Pulse Avalanche Energy (N-Channel) | EAS | VDD=50V, VGS=10V, L=0.5mH, RG=25 | 10.5 mJ | mJ | ||
| Single Pulse Avalanche Energy (P-Channel) | EAS | VDD=-50V, VGS=-10V, L=0.5mH, RG=25 | 24 mJ | mJ | ||
| Power Dissipation | PD | Ta=25 | 2.5 W | Ta=25 | 2.5 W | W |
| Thermal Resistance Junction-to-Ambient | RJA | 50 /W | 50 /W | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | -55 to 150 | |||
| N-Channel Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 V | V | ||
| N-Channel Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | 1 uA | uA | ||
| N-Channel Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 nA | VGS=20V , VDS=0V | 100 nA | nA |
| N-Channel Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 to 2.5 V | VGS=VDS , ID =-250uA | -1.0 to -2.5 V | V |
| N-Channel Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=5A | 40 to 50 m | m | ||
| N-Channel Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=3A | 45 to 60 m | m | ||
| N-Channel Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 2605 pF | VDS=-50V , VGS=0V , f=1MHz | 2410 pF | pF |
| N-Channel Output Capacitance | Coss | 109 pF | 81 pF | pF | ||
| N-Channel Reverse Transfer Capacitance | Crss | 67 pF | 68 pF | pF | ||
| N-Channel Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=5A | 17 nC | VDS=-50V , VGS=-10V , ID=-5A | 21 nC | nC |
| N-Channel Gate-Source Charge | Qgs | 5.5 nC | 3 nC | nC | ||
| N-Channel Gate-Drain Charge | Qg | 3.4 nC | 3.5 nC | nC | ||
| N-Channel Turn-On Delay Time | Td(on) | VDD=50V, VGS=10V , RG=3, ID=10A | 38.1 nS | VDD=-50V VGS=-10V , RG=3, ID=-5A | 9 nS | nS |
| N-Channel Rise Time | Tr | 12 nS | 28 nS | nS | ||
| N-Channel Turn-Off Delay Time | Td(off) | 54 nS | 79 nS | nS | ||
| N-Channel Fall Time | Tf | 16.1 nS | 83 nS | nS | ||
| N-Channel Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 V | VGS=0V , IS=-1A , TJ=25 | -1.2 V | V |
| N-Channel Maximum Body-Diode Continuous Current | IS | 6 A | -6 A | A | ||
| N-Channel Reverse Recovery Time | Trr | IS=5A, di/dt=100A/us, TJ=25 | 40 nS | IS=-3A, di/dt=-100A/us, Tj=25 | 70 nS | nS |
| N-Channel Reverse Recovery Charge | Qrr | 43 nC | 135 nC | nC | ||
| P-Channel Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -100 V | V | ||
| P-Channel Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | -1 uA | uA | ||
| P-Channel Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 90 to 115 m | m | ||
| P-Channel Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-3A | 100 to 135 m | m | ||
| Package Dimensions | Symbol | Min. | Max. | Units | ||
| A | 1.35 | 1.75 | mm | |||
| A1 | 0.10 | 0.25 | mm | |||
| A2 | 1.35 | 1.55 | mm | |||
| b | 0.33 | 0.51 | mm | |||
| c | 0.17 | 0.25 | mm | |||
| D | 4.80 | 5.00 | mm | |||
| e | 1.27 | REF. | mm | |||
| E | 5.80 | 6.20 | mm | |||
| E1 | 3.80 | 4.00 | mm | |||
| L | 0.40 | 1.27 | mm | |||
| 0 | 8 |
2504101957_Siliup-SP1049CP8_C22385412.pdf
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