150V N Channel MOSFET Siliup SP015N08GHTD with TO 263 Package and Single Pulse Avalanche Energy Test
Key Attributes
Model Number:
SP015N08GHTD
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Pd - Power Dissipation:
190W
Input Capacitance(Ciss):
3.75nF
Output Capacitance(Coss):
290pF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP015N08GHTD
Package:
TO-263
Product Description
Product Overview
The SP015N08GHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It is available in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP015N08GHTD
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
- Certifications: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 150 | V | ||||
| RDS(on)TYP | @10V | 8 | m | |||
| ID | 110 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 110 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 75 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 440 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25, unless otherwise noted) | 625 | mJ | ||
| Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 190 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25, unless otherwise noted) | 0.66 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 8 | 10 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 3750 | - | pF |
| Output Capacitance | Coss | VDS=75V , VGS=0V , f=1MHz | - | 290 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=75V , VGS=0V , f=1MHz | - | 18 | - | pF |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=50A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | VDS=75V , VGS=10V , ID=50A | - | 13.8 | - | |
| Gate-Drain Charge | Qgd | VDS=75V , VGS=10V , ID=50A | - | 11.2 | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 50A, RG = 6 | - | 15.6 | - | nS |
| Rise Time | tr | VGS = 10V, VDS = 50V, ID = 50A, RG = 6 | - | 32 | - | |
| Turn-Off Delay Time | td(off) | VGS = 10V, VDS = 50V, ID = 50A, RG = 6 | - | 43 | - | |
| Fall Time | tf | VGS = 10V, VDS = 50V, ID = 50A, RG = 6 | - | 35 | - | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | IS = 1A, VGS = 0V | - | - | 110 | A |
| Reverse Recovery Time | Trr | IS=50A, di/dt=200A/us, TJ=25 | - | 89 | - | nS |
| Reverse Recovery Charge | Qrr | IS=50A, di/dt=200A/us, TJ=25 | - | 196 | - | nC |
| Package Information | ||||||
| Package Type | TO-263 | |||||
| Dimensions (mm) | Min. | Max. | ||||
| A | 4.470 | 4.670 | ||||
| A1 | 0.000 | 0.150 | ||||
| B | 1.120 | 1.420 | ||||
| b | 0.710 | 0.910 | ||||
| b1 | 1.170 | 1.370 | ||||
| c | 0.310 | 0.530 | ||||
| c1 | 1.170 | 1.370 | ||||
| D | 10.010 | 10.310 | ||||
| E | 8.500 | 8.900 | ||||
| e | 2.540 TYP. | |||||
| e1 | 4.980 | 5.180 | ||||
| L | 14.940 | 15.500 | ||||
| L1 | 4.950 | 5.450 | ||||
| L2 | 2.340 | 2.740 | ||||
| L3 | 1.300 | 1.700 | ||||
| 0 | 8 | |||||
| V | 5.600 REF. | |||||
2506271720_Siliup-SP015N08GHTD_C49257222.pdf
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