Low On State Resistance Power MOSFET SANKEN MLD685D Suitable for Electric Power Steering Applications
Key Attributes
Model Number:
MLD685D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
85A
RDS(on):
4.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@1mA
Reverse Transfer Capacitance (Crss@Vds):
1.1nF
Input Capacitance(Ciss):
11.5nF
Output Capacitance(Coss):
1.5nF
Pd - Power Dissipation:
150W
Mfr. Part #:
MLD685D
Package:
TO-3P
Product Description
Product Overview
The SANKEN ELECTRIC MLD685D is a power MOSFET designed for high current switching applications. It features low on-state resistance and a built-in gate protection diode, making it suitable for demanding applications such as electric power steering. The device is housed in a MT100 (TO3P) package.
Product Attributes
- Brand: SANKEN ELECTRIC
- Model: MLD685D
- Package: MT100 (TO3P)
- Date: Feb. 2011
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Test Conditions |
|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 60 | V | (ID=100A) |
| Gate to Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current | ID | 85 | A | |
| Pulsed Drain Current | ID(pulse) | 280 | A | 1 PW100sec. duty cycle1 |
| Maximum Power Dissipation | PD | 150 | W | (Tc=25) |
| Single Pulse Avalanche Energy | EAS | 280 | mJ | 2 VDD=20V, L=1mH, IL=20A, unclamped, See Fig.1 |
| Channel Temperature | Tch | -55~150 | C | |
| Storage Temperature | Tstg | -55~150 | C | |
| Drain to Source breakdown Voltage | V(BR)DSS | 60 | V | ID=100A,VGS=0V |
| Gate to Source Leakage Current | IGSS | 10 | A | VGS=20V |
| Drain to Source Leakage Current | IDSS | 100 | A | VDS=60V, VGS=0V |
| Gate Threshold Voltage | VTH | 2.0 ~ 3.0 | V | VDS=10V, ID=1mA (TYP 2.5V) |
| Forward Transconductance | Re(yfs) | 30 | S | VDS=10V, ID=42A |
| Static Drain to Source On-Resistance | RDS(ON) | 4.7 | m | ID=42A, VGS=10V (MAX) |
| Input Capacitance | Ciss | 11500 | pF | VDS=10V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 1500 | pF | VDS=10V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 1100 | pF | VDS=10V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 60 | ns | ID=42A, VDD 16V RG=22, VGS=10V See Fig.2 |
| Rise Time | tr | 25 | ns | ID=42A, VDD 16V RG=22, VGS=10V See Fig.2 |
| Turn-Off Delay Time | td(off) | 370 | ns | ID=42A, VDD 16V RG=22, VGS=10V See Fig.2 |
| Fall Time | tf | 65 | ns | ID=42A, VDD 16V RG=22, VGS=10V See Fig.2 |
| Source-Drain Diode Forward Voltage | VSD | 0.87 ~ 1.5 | V | ISD=50A,VGS=0V (TYP 1.5V) |
| Source-Drain Diode Reverse Recovery Time | trr | 70 | ns | ISD=50A, i/dt=100A/us |
2411200137_SANKEN-MLD685D_C20344590.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
