Siliup SP30P06TH P Channel MOSFET with Low On Resistance and High Continuous Drain Current Capability
Key Attributes
Model Number:
SP30P06TH
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V;9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
493pF
Number:
1 P-Channel
Pd - Power Dissipation:
55W
Input Capacitance(Ciss):
4.32nF
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
SP30P06TH
Package:
TO-252-2L
Product Description
Product Overview
The SP30P06TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient operation, it features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters, high-frequency switching, and synchronous rectification applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP30P06TH
- Technology: P-Channel MOSFET
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -30 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | -10V | 6 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | -4.5V | 9 | m | ||
| Continuous Drain Current | ID | -60 | A | |||
| Features | ||||||
| Fast Switching | ||||||
| Low Gate Charge and Rdson | ||||||
| 100% Single Pulse avalanche energy Test | ||||||
| Applications | ||||||
| DC-DC Converter | ||||||
| Ideal for high-frequency switching and synchronous rectification | ||||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | -60 | A | |||
| Continuous Drain Current (TC=100) | ID | -40 | A | |||
| Pulsed Drain Current | IDM | -240 | A | |||
| Single Pulse Avalanche Energy | EAS | 450 | mJ | |||
| Power Dissipation (TC=25) | PD | 55 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.3 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24 , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | -1 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 6 | 8 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 9 | 13 | m | |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 3456 | pF | ||
| Output Capacitance | Coss | 387 | pF | |||
| Reverse Transfer Capacitance | Crss | 335 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-20A | 62 | nC | ||
| Gate-Source Charge | Qgs | 12 | nC | |||
| Gate-Drain Charge | Qg | 14 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V ,VGS=-10V , RG=3, ID=-20A | 15 | nS | ||
| Rise Time | Tr | 61 | nS | |||
| Turn-Off Delay Time | Td(off) | 54 | nS | |||
| Fall Time | Tf | 65 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -60 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 25 | nS | ||
| Reverse Recovery Charge | Qrr | 12 | nC | |||
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | ||||
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | ||||
| b | 0.660 - 0.860 | 0.026 - 0.034 | ||||
| c | 0.460 - 0.580 | 0.018 - 0.023 | ||||
| D | 6.500 - 6.700 | 0.256 - 0.264 | ||||
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | ||||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 - 6.200 | 0.236 - 0.244 | ||||
| e | 2.186 - 2.386 | 0.086 - 0.094 | ||||
| L | 9.800 - 10.400 | 0.386 - 0.409 | ||||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | ||||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | ||||
| 1.100 - 1.300 | 0.043 - 0.051 | |||||
| 0 - 8 | 0 - 8 | |||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP30P06TH_C41355013.pdf
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