Silicon Planar Zener Diode Shikues MM3Z3V6 with Surface Mount SOD323 Package and 300 Milliwatt Power
Key Attributes
Model Number:
MM3Z3V6
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Reverse Leakage Current (Ir):
5uA
Pd - Power Dissipation:
200mW
Impedance(Zzt):
90Ω
Diode Configuration:
Independent
Zener Voltage(Range):
3.4V~3.8V
Zener Voltage(Nom):
3.6V
Impedance(Zzk):
1kΩ
Mfr. Part #:
MM3Z3V6
Package:
SOD-323
Product Description
Product Overview
The MM3Z2V0 THRU MM3Z75 series are silicon planar Zener diodes designed for general-purpose electronic devices. They offer a wide zener reverse voltage range from 2.0V to 75V and feature a total power dissipation of up to 300 mW. Their small plastic package (SOD-323) is suitable for surface-mounted designs, providing a tolerance of approximately 5%.
Product Attributes
- Brand: Shikues
- Material: Silicon Planar
- Package: SOD-323
- Certifications: MIL-STD-750, Method 2026 (for solderability)
Technical Specifications
| Type | Marking | Zener Voltage (V) Min | Zener Voltage (V) Nom | Zener Voltage (V) Max | IZT (mA) | ZZT () Max | IR (uA) Max | VF (V) at IF=10mA |
| MM3Z2V0 | WY | 1.8 | 2.0 | 2.15 | 5 | 100 | 120 | 0.9 |
| MM3Z2V2 | WZ | 2.08 | 2.2 | 2.33 | 5 | 100 | 120 | 0.9 |
| MM3Z2V4 | 00 | 2.28 | 2.4 | 2.56 | 5 | 100 | 120 | 0.9 |
| MM3Z2V7 | 01 | 2.5 | 2.7 | 2.9 | 5 | 110 | 120 | 0.9 |
| MM3Z3V0 | 02 | 2.8 | 3.0 | 3.2 | 5 | 120 | 50 | 0.9 |
| MM3Z3V3 | 05 | 3.1 | 3.3 | 3.5 | 5 | 130 | 20 | 0.9 |
| MM3Z3V6 | 06 | 3.4 | 3.6 | 3.8 | 5 | 130 | 10 | 0.9 |
| MM3Z3V9 | 07 | 3.7 | 3.9 | 4.1 | 5 | 130 | 5 | 0.9 |
| MM3Z4V3 | 08 | 4 | 4.3 | 4.6 | 5 | 130 | 5 | 0.9 |
| MM3Z4V7 | 09 | 4.4 | 4.7 | 5 | 5 | 130 | 2 | 0.9 |
| MM3Z5V1 | 0A | 4.8 | 5.1 | 5.4 | 5 | 130 | 2 | 0.9 |
| MM3Z5V6 | 0C | 5.2 | 5.6 | 6 | 5 | 80 | 1 | 0.9 |
| MM3Z6V2 | 0E | 5.8 | 6.2 | 6.6 | 5 | 50 | 1 | 0.9 |
| MM3Z6V8 | 0F | 6.4 | 6.8 | 7.2 | 5 | 30 | 0.5 | 0.9 |
| MM3Z7V5 | 0G | 7 | 7.5 | 7.9 | 5 | 30 | 0.5 | 0.9 |
| MM3Z8V2 | 0H | 7.7 | 8.2 | 8.7 | 5 | 30 | 0.5 | 0.9 |
| MM3Z9V1 | 0K | 8.5 | 9.1 | 9.6 | 5 | 30 | 0.5 | 0.9 |
| MM3Z10 | 0L | 9.4 | 10 | 10.6 | 5 | 30 | 0.1 | 0.9 |
| MM3Z11 | 0M | 10.4 | 11 | 11.6 | 5 | 30 | 0.1 | 0.9 |
| MM3Z12 | 0N | 11.4 | 12 | 12.7 | 5 | 35 | 0.1 | 0.9 |
| MM3Z13 | 0P | 12.4 | 13 | 14.1 | 5 | 35 | 0.1 | 0.9 |
| MM3Z15 | 0T | 13.8 | 15 | 15.6 | 5 | 40 | 0.1 | 0.9 |
| MM3Z16 | 0U | 15.3 | 16 | 17.1 | 5 | 40 | 0.1 | 0.9 |
| MM3Z18 | 0W | 16.8 | 18 | 19.1 | 5 | 45 | 0.1 | 0.9 |
| MM3Z20 | 0Z | 18.8 | 20 | 21.2 | 5 | 50 | 0.1 | 0.9 |
| MM3Z22 | 10 | 20.8 | 22 | 23.3 | 5 | 55 | 0.1 | 0.9 |
| MM3Z24 | 11 | 22.8 | 24 | 25.6 | 5 | 60 | 0.1 | 0.9 |
| MM3Z27 | 12 | 25.1 | 27 | 28.9 | 2 | 70 | 0.1 | 0.9 |
| MM3Z30 | 14 | 28 | 30 | 32 | 2 | 80 | 0.1 | 0.9 |
| MM3Z33 | 18 | 31 | 33 | 35 | 2 | 80 | 0.1 | 0.9 |
| MM3Z36 | 19 | 34 | 36 | 38 | 2 | 90 | 0.1 | 0.9 |
| MM3Z39 | 20 | 37 | 39 | 41 | 2 | 100 | 0.1 | 0.9 |
| MM3Z43 | 21 | 40 | 43 | 46 | 2 | 130 | 0.1 | 0.9 |
| MM3Z47 | 1A | 44 | 47 | 50 | 2 | 150 | 0.1 | 0.9 |
| MM3Z51 | 1C | 48 | 51 | 54 | 2 | 180 | 0.1 | 0.9 |
| MM3Z56 | 1D | 52 | 56 | 60 | 2 | 200 | 0.1 | 0.9 |
| MM3Z62 | 1E | 58 | 62 | 66 | 2 | 215 | 0.1 | 0.9 |
| MM3Z68 | 1F | 64 | 68 | 72 | 2 | 240 | 0.1 | 0.9 |
| MM3Z75 | 1G | 70 | 75 | 79 | 2 | 265 | 0.1 | 0.9 |
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 300 | mW |
| Thermal Resistance Junction To Ambient | RJA | 417 | /W |
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 |
2510281841_Shikues-MM3Z3V6_C216742.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
