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quality 60V N Channel Power MOSFET Siliup SP60N08GP8 Featuring Split Gate Trench Technology for Power Switching factory
quality 60V N Channel Power MOSFET Siliup SP60N08GP8 Featuring Split Gate Trench Technology for Power Switching factory
quality 60V N Channel Power MOSFET Siliup SP60N08GP8 Featuring Split Gate Trench Technology for Power Switching factory
quality 60V N Channel Power MOSFET Siliup SP60N08GP8 Featuring Split Gate Trench Technology for Power Switching factory

60V N Channel Power MOSFET Siliup SP60N08GP8 Featuring Split Gate Trench Technology for Power Switching

Key Attributes
Model Number: SP60N08GP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
RDS(on):
7.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
310pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
81W
Gate Charge(Qg):
27.9nC@10V
Mfr. Part #:
SP60N08GP8
Package:
SOP-8
Product Description

Product Overview

The SP60N08GP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), achieved through advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. The device is available in a SOP-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N08GP8
  • Technology: Advanced Split Gate Trench Technology
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 60 V
RDS(on)TYP RDS(on) @10V 7.5 10 m
RDS(on)TYP RDS(on) @4.5V 10 13 m
ID ID 15 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Ta=25 unless otherwise noted) 15 A
Continuous Drain Current ID (Ta=100C) 10 A
Pulse Drain Current IDM Tested 60 A
Single Pulse Avalanche Energy EAS 91 mJ
Power Dissipation PD 81 W
Thermal Resistance Junction-to-Ambient RJA 1.54 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 60 - - V
Drain Cut-Off Current IDSS VDS = 48V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.5 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 7.5 10 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 10A - 10 13 m
Dynamic Characteristics
Input Capacitance Ciss VDS =30V, VGS = 0V, f = 1.0MHz - 1350 - pF
Output Capacitance Coss - 310 -
Reverse Transfer Capacitance Crss - 25 -
Total Gate Charge Qg VDS=30V , VGS=10V , ID=20A - 27.9 - nC
Gate-Source Charge Qgs - 7.8 -
Gate-Drain Charge Qg d - 6.2 -
Switching Characteristics
Turn-On Delay Time td(on) VGS =10V,VDS =30V, ID=20A RG = 4.7 - 14 - nS
Rise Time tr - 26 -
Turn-Off Delay Time td(off) - 33.8 -
Fall Time tf - 26.4 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 15 A
Reverse Recovery Time Trr IS=30A, di/dt=100A/us, TJ=25 - 36 - nS
Reverse Recovery Charge Qrr - 23 - nC
Package Information
Device Code 60N08G
Package SOP-8L
Order Information SP60N08GP8
Unit/Tape 4000
SOP-8L Package Dimensions (Millimeters)
Symbol Dimensions Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

2506271720_Siliup-SP60N08GP8_C49257261.pdf
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