Shenzhen Haoruijia Elec Z0409 bidirectional triac designed for switching in various control circuits
Z0409 Bidirectional Triac
The Z0409 is a bidirectional triac offering excellent temperature characteristics and high reliability. It features four-quadrant gate sensitivity and complies with RHOS environmental standards and UL safety specifications. This triac is suitable for various switching control circuits including valve control, light control, hair dryers, smart home devices, and fan control.
Product Attributes
- Brand: SIKA CO.,LIMITED
- Certifications: RHOS, UL
Technical Specifications
| Symbol | Parameter | Value | Unit | Notes |
| Main Parameters (Tj=25) | ||||
| IT(RMS) | On-state Current | 4 | A | |
| VDRM / VRRM | Repetitive Peak Off-state Voltage | 600 | V | |
| IGT | Gate Trigger Current | 10 | mA | |
| Absolute Maximum Ratings | ||||
| IT(RMS) | On-state Current (full sine wave) | 4 | A | |
| ITSM | Non-repetitive Surge Current (tp=10ms) | 20 | A | |
| It | It Value for fusing | 2.2 | As | |
| IGM | Peak Gate Current (tp=20s) | 1.2 | A | |
| PG(AV) | Average Gate Power Dissipation | 0.2 | W | |
| dI/dt | Critical Rate of Rise of On-state Current (IG=IGT) | 50 | A/s | |
| Tstg | Storage Temperature | -40--+150 | ||
| Tj | Junction Temperature | -40--+125 | ||
| Thermal Resistance | ||||
| Rth (j-a) | Junction to ambient | 100 | /W | |
| Electrical Characteristics (Tj=25 unless otherwise specified) | ||||
| IGT | Gate Trigger Current (VD=12V, RL=30) | 10 Max. | mA | Quadrants I, II, III, IV |
| IDRM | Off-state Current (VD=VDRM) | 5 Max. (Tj=25), 1 Max. (Tj=125) | A / mA | |
| IRRM | Reverse Blocking Current (VD=VRRM) | 5 Max. (Tj=25), 1 Max. (Tj=125) | A / mA | |
| IL | Latching Current (IG=1.2IGT) | 15 Max. (Quadrants I, III), 25 Max. (Quadrant II) | mA | |
| VGT | Gate Trigger Voltage (VD=12V, RL=30) | 1.3 Max. | V | |
| VGD | Gate Non-trigger Voltage (VD=VDRM, RL=3.3K, Tj=125) | 0.2 Min. | V | |
| VTM | Peak On-state Voltage (ITM=6A, tp=380s) | 1.6 Max. | V | |
| IH | Holding Current (VD=12V, IT=200mA) | 10 Max. | mA | |
| dV/dt | Critical Rate of Rise of Off-state Voltage (VD=67%VDRM, Gate open, Tj=125) | 100 Min. | V/s | |
2409271232_Shenzhen-Haoruijia-Elec--Z0409_C2916510.pdf
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