100V N Channel Power MOSFET Siliup SP010N04BGTD with Advanced Split Gate Trench and Low Gate Charge
Key Attributes
Model Number:
SP010N04BGTD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.9mΩ@10V;6.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
1.125nF
Input Capacitance(Ciss):
2.97nF
Pd - Power Dissipation:
185W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP010N04BGTD
Package:
TO-263
Product Description
Product Overview
The SP010N04BGTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching speed, low Gate Charge and RDS(on), and utilizes Advanced Split Gate Trench Technology. It is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 010N04BG
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 4.9 | m | ||
| On-Resistance | RDS(on)TYP | @4.5V | 6.4 | m | ||
| Continuous Drain Current | ID | 125 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25,unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25C) | 125 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 83 | A | ||
| Pulse Drain Current Tested | IDM | 500 | A | |||
| Single pulsed avalanche energy | EAS | 361 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 185 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.68 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 4.9 | 6.1 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 6.4 | 8.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 2970 | - | pF |
| Output Capacitance | Coss | - | 1125 | - | ||
| Reverse Transfer Capacitance | Crss | - | 24 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 27 | - | ||
| Gate-Drain Charge | Qg | - | 7.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V , VGS=10V , RG=3 , ID=50A | - | 12.1 | - | nS |
| Rise Time | Tr | - | 17.4 | - | ||
| Turn-Off Delay Time | Td(off) | - | 47 | - | ||
| Fall Time | Tf | - | 32 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 125 | A | |
| Reverse recover time | Trr | IS=50A, di/dt=100A/us, Tj=25 | - | 32 | - | nS |
| Reverse recovery charge | Qrr | - | 146 | - | nC | |
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. | ||
2504101957_Siliup-SP010N04BGTD_C22385368.pdf
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