power management device Siliup SP60P08GNK 60V P Channel Power MOSFET with Split Gate Trench Technology
Key Attributes
Model Number:
SP60P08GNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
75A
RDS(on):
8mΩ@10V;10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 P-Channel
Pd - Power Dissipation:
110W
Output Capacitance(Coss):
865pF
Input Capacitance(Ciss):
4.483nF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
SP60P08GNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP60P08GNK is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features advanced Split Gate Trench Technology for fast switching speeds and a low on-resistance, making it suitable for DC-DC converters and motor control applications. This device is ROHS Compliant & Halogen-Free and is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60P08GNK
- Technology: Advanced Split Gate Trench Technology
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Package: PDFN56-8L
- Origin: China (implied by website domain and company name)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| RDS(on) | @-10V | 8 | 10 | m | ||
| RDS(on) | @-4.5V | 10 | 13.5 | m | ||
| Continuous Drain Current | ID | -75 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | -75 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -50 | A | ||
| Pulse Drain Current | IDM | Tested | -300 | A | ||
| Maximum Power Dissipation | PD | (Tc=25C) | 110 | W | ||
| Single pulsed avalanche energy | EAS | 453 | mJ | |||
| Thermal Resistance-Junction to Case | RJC | 1.13 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-15A | 8 | 10 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 10 | 13.5 | m | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 4483 | pF | ||
| Output Capacitance | Coss | 865 | pF | |||
| Reverse Transfer Capacitance | Crss | 22 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-15A | 52 | nC | ||
| Gate-Source Charge | Qgs | 9 | ||||
| Gate-Drain Charge | Qg d | 8 | ||||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V , RG=3, ID=-15A | 18 | ns | ||
| Rise Time | Tr | 20 | ns | |||
| Turn-Off Delay Time | Td(off) | 54 | ns | |||
| Fall Time | Tf | 34 | ns | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Reverse recovery time | Trr | IS=-15A, di/dt=100A/us, TJ=25 | 49 | ns | ||
| Reverse recovery charge | Qrr | 70 | nC | |||
| Diode Continuous Current | IS | -75 | A | |||
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
2506271720_Siliup-SP60P08GNK_C49257262.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
