20V P Channel MOSFET Siliup SP2013NQ designed for DC DC converters and power management applications
Key Attributes
Model Number:
SP2013NQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@4.5V;16mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
174pF
Number:
1 P-Channel
Output Capacitance(Coss):
204pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.515nF
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SP2013NQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP2013NQ is a 20V P-Channel MOSFET designed for power management functions and DC-DC converters. It features low on-resistance and low input capacitance, making it suitable for various power applications. This MOSFET is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2013NQ
- Technology: P-Channel MOSFET
- Package: PDFN2X2-6L
- Marking: 2013 (Device Code)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | RDS(on)TYP | @-4.5V | 13 | m | ||
| RDS(on) | RDS(on)TYP | @-2.5V | 16 | m | ||
| Continuous Drain Current | ID | -13 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -20 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 12 | V | ||
| Continuous Drain Current | ID | (Ta=25) | -13 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | -52 | A | ||
| Power Dissipation | PD | (Ta=25) | 3 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 41 | /W | ||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-5A | 13 | 17 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-2.5V, ID =-4A | 16 | 22 | m | |
| Input Capacitance | Ciss | VDS=-6V , VGS=0V , f=1MHz | 1515 | pF | ||
| Output Capacitance | Coss | VDS=-6V , VGS=0V , f=1MHz | 204 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-6V , VGS=0V , f=1MHz | 174 | pF | ||
| Total Gate Charge | Qg | VDS=-6V , VGS=-4.5V , ID=-5A | 14 | nC | ||
| Gate-Source Charge | Qgs | VDS=-6V , VGS=-4.5V , ID=-5A | 2.3 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-6V , VGS=-4.5V , ID=-5A | 3.6 | nC | ||
| Turn-On Delay Time | Td(on) | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | 26 | nS | ||
| Rise Time | Tr | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | 24 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | 45 | nS | ||
| Fall Time | Tf | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | 20 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Package Information (PDFN2X2-6L)
| Symbol | Dimensions (mm) | ||
|---|---|---|---|
| Min. | Typ. | Max. | |
| A | 0.70 | 0.75 | 0.80 |
| A1 | 0.02 | 0.05 | |
| b | 0.25 | 0.30 | 0.35 |
| b1 | 0.20REF | ||
| c | 0.203REF | ||
| D | 1.90 | 2.00 | 2.10 |
| D1 | 0.08 | 0.125 | 0.18 |
| D2 | 0.85 | 0.90 | 0.95 |
| D3 | 0.25 | 0.30 | 0.35 |
| D4 | 0.33 | 0.375 | 0.43 |
| e | 0.65BSC | ||
| Nd | 1.30BSC | ||
| E | 1.90 | 2.00 | 2.10 |
| E2 | 0.95 | 1.00 | 1.05 |
| E3 | 0.55 | 0.60 | 0.65 |
| L | 0.20 | 0.25 | 0.30 |
| h | 0.25REF | ||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP2013NQ | PDFN2X2-6L | 3000 |
2504101957_Siliup-SP2013NQ_C41355004.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
