High current N Channel MOSFET Siliup SP70N07HTH 70V with low RDS on and fast switching capabilities
Key Attributes
Model Number:
SP70N07HTH
Product Custom Attributes
Drain To Source Voltage:
70V
Configuration:
-
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
231pF
Number:
1 N-channel
Output Capacitance(Coss):
261pF
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
4.062nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SP70N07HTH
Package:
TO-252-2L
Product Description
Product Overview
The SP70N07HTH is a 70V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching capabilities, low gate charge, and a low RDS(on) of 7.5m at 10V. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP70N07HTH
- Package: TO-252
- Channel Type: N-Channel
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 70 | V | |||
| RDS(on) Typ | RDS(on)TYP | @10V | 7.5 | m | ||
| Continuous Drain Current | ID | 80 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 70 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 80 | A | ||
| Continuous Drain Current | ID | (TC=100) | 53 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 320 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 342 | mJ | ||
| Power Dissipation | PD | (TC=25) | 110 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25) | 1.14 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 70 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=56V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 7.5 | 9.5 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 4062 | - | pF |
| Output Capacitance | Coss | VDS=25V , VGS=0V , f=1MHz | - | 261 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V , VGS=0V , f=1MHz | - | 231 | - | pF |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | VDS=20V , VGS=10V , ID=20A | - | 11 | - | nC |
| Gate-Drain Charge | Qgd | VDS=20V , VGS=10V , ID=20A | - | 9 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=30V VGS=10V , RG=6, ID=20A | - | 15 | - | nS |
| Rise Time | Tr | VDD=30V VGS=10V , RG=6, ID=20A | - | 94 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=30V VGS=10V , RG=6, ID=20A | - | 46 | - | nS |
| Fall Time | Tf | VDD=30V VGS=10V , RG=6, ID=20A | - | 32 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 80 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 30 | - | nS |
| Reverse Recovery Charge | Qrr | IS=20A, di/dt=100A/us, TJ=25 | - | 42 | - | nC |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP70N07HTH | TO-252 | 2500 |
2504101957_Siliup-SP70N07HTH_C41354983.pdf
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