60V P Channel Power MOSFET Siliup SP60P03GHTO with Low Reverse Transfer Capacitance and Gate Charge
Key Attributes
Model Number:
SP60P03GHTO
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
220A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.517nF
Pd - Power Dissipation:
184W
Input Capacitance(Ciss):
8.364nF
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
SP60P03GHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP60P03GHTO is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, this MOSFET offers low gate charge and RDS(on), along with low reverse transfer capacitance. It is designed for power switching applications, DC/DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P03GHTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| RDS(on) | RDS(on)TYP | @ -10V | 3.1 | m | ||
| Continuous Drain Current | ID | -220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -220 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -148 | A | ||
| Pulsed Drain Current | IDM | -880 | A | |||
| Single Pulse Avalanche Energy | EAS | 1936 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 184 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.68 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -60 | -68 | V | |
| Drain-Source Leakage Current | IDSS | VDS= -48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS= 20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -1.5 | -2.5 | -3.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -10V , ID= -70A | - | 3.1 | 3.9 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS= -20V,F=1MHz | - | 8364 | - | pF |
| Output Capacitance | Coss | - | 1517 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 110 | - | ||
| Total Gate Charge | Qg | VDS= -30V, ID= -70A, VGS= -10V | - | 82 | - | nC |
| Gate-Source Charge | Qgs | - | 26 | - | ||
| Gate-Drain Charge | Qgd | - | 18 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD= -20V, ID= -70A, VGS= -10V, RG=2.6 | - | 20 | - | nS |
| Rise Time | Tr | - | 58 | - | ||
| Turn-Off Delay Time | Td(off) | - | 145 | - | ||
| Fall Time | Tf | - | 168 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS= -100A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 140 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=-50A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 116 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2504101957_Siliup-SP60P03GHTO_C42372352.pdf
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