Low RDS on N Channel MOSFET Siliup SP40N01GNP 40V with Fast Switching and Cu Clip Process Technology

Key Attributes
Model Number: SP40N01GNP
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
185A
RDS(on):
1.1mΩ@10V;1.3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.5nF
Output Capacitance(Coss):
1.85nF
Pd - Power Dissipation:
142W
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
SP40N01GNP
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40N01GNP is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology and Cu-Clip process. This MOSFET is designed for PWM applications, hard switched and high frequency circuits, and power management. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Technology: Advanced Split Gate Trench Technology
  • Process: Cu-Clip Process
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 40 V
RDS(on) @10V 1.1 m
RDS(on) @4.5V 1.3 m
Continuous Drain Current ID 185 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 40 V
Gate-Source Voltage VGS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25) 185 A
Continuous Drain Current ID (Tc=100) 125 A
Pulsed Drain Current IDM 740 A
Single Pulse Avalanche Energy EAS 1089 mJ
Power Dissipation PD (Tc=25) 142 W
Thermal Resistance Junction-to-Case RJC 0.88 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 47 - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=50A - 1.1 1.4 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=50A - 1.3 2.1 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 5500 - pF
Output Capacitance Coss - 1850 - pF
Reverse Transfer Capacitance Crss - 65 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=50A - 128 - nC
Gate-Source Charge Qgs - 19 - nC
Gate-Drain Charge Qg d - 12 - nC
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6, ID=50A - 13.5 - nS
Rise Time Tr - 8.8 - nS
Turn-Off Delay Time Td(off) - 52 - nS
Fall Time Tf - 9.6 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 185 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 55 - nS
Reverse Recovery Charge Qrr - 53 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2506271720_Siliup-SP40N01GNP_C49257247.pdf

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