30V P Channel MOSFET Siliup SP4435AP8 featuring low RDS on and single pulse avalanche energy testing
Key Attributes
Model Number:
SP4435AP8
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
173pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
SP4435AP8
Package:
SOP-8L
Product Description
Product Overview
The SP4435AP8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for power switching applications, it features fast switching capabilities, low gate charge, and low RDS(on). This device is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Model: SP4435AP8
- Marking: 4435A
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | -30 | V | |||
| RDS(on)TYP | RDS(on) | @-10V | 11 | 15 | m | |
| RDS(on)TYP | RDS(on) | @-4.5V | 14 | 25 | m | |
| ID | ID | -13 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -13 | A | |||
| Pulsed Drain Current | IDM | -42 | A | |||
| Single Pulse Avalanche Energy | EAS | 56 | mJ | |||
| Power Dissipation | PD | 2.5 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 50 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | - | 11 | 15 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-7A | - | 14 | 25 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1450 | - | pF |
| Output Capacitance | Coss | - | 205 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 173 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-9A | - | 20 | - | nC |
| Gate-Source Charge | Qgs | - | 5.1 | - | ||
| Gate-Drain Charge | Qg d | - | 7.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V ,VGS=-10V , RG=3.3, ID=-9A | - | 16 | - | nS |
| Rise Time | Tr | - | 21 | - | ||
| Turn-Off Delay Time | Td(off) | - | 43 | - | ||
| Fall Time | Tf | - | 17 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -13 | A | |
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | - | 12 | - | nS |
| Reverse Recovery Charge | Qrr | - | 3.5 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2410311049_Siliup-SP4435AP8_C42372344.pdf
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