Silicon Planar Zener Diodes Shikues MM1W43 with Wide Zener Voltage Range and Compact SOD123FL Package
Key Attributes
Model Number:
MM1W43
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Reverse Leakage Current (Ir):
1uA
Pd - Power Dissipation:
1W
Impedance(Zzt):
70Ω
Diode Configuration:
Independent
Zener Voltage(Range):
40.9V~45.6V
Zener Voltage(Nom):
43V
Mfr. Part #:
MM1W43
Package:
SOD-123FL
Product Description
Product Overview
Silicon Planar Zener Diodes designed for surface-mounted applications. These diodes offer a wide zener reverse voltage range from 3.3V to 330V and a maximum total power dissipation of 1W. Their small plastic package (SOD-123FL) makes them suitable for compact designs.
Product Attributes
- Brand: MM1W Series
- Package: SOD-123FL
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 16mg (0.00056oz)
Technical Specifications
| Type | Marking | Zener Voltage Range (V) | Nominal VZT (V) | ZT @ IZT () Max | IR @ VR Max (A) | Admissible Zener Current IZM (mA) |
| MM1W3V3 | FHD | 3.10 - 3.50 | 3.3 | 75 @ 10mA | 100 | 100 |
| MM1W3V6 | FHE | 3.40 - 3.80 | 3.6 | 69 @ 10mA | 100 | 100 |
| MM1W3V9 | FHF | 3.70 - 4.10 | 3.9 | 64 @ 10mA | 100 | 100 |
| MM1W4V3 | FHG | 4.06 - 4.56 | 4.3 | 58 @ 10mA | 100 | 100 |
| MM1W4V7 | FHJ | 4.50 - 4.93 | 4.7 | 53 @ 10mA | 100 | 100 |
| MM1W5V1 | FHK | 4.84 - 5.36 | 5.1 | 49 @ 10mA | 100 | 100 |
| MM1W5V6 | FHL | 5.32 - 5.92 | 5.6 | 45 @ 10mA | 100 | 100 |
| MM1W6V2 | FHN | 5.86 - 6.51 | 6.2 | 41 @ 10mA | 100 | 100 |
| MM1W6V8 | FHO | 6.46 - 7.18 | 6.8 | 37 @ 10mA | 100 | 100 |
| MM1W7V5 | FHQ | 7.12 - 7.88 | 7.5 | 34 @ 10mA | 5 | 60 |
| MM1W8V2 | FHR | 7.79 - 8.67 | 8.2 | 31 @ 10mA | 5 | 50 |
| MM1W9V1 | FHT | 8.60 - 9.59 | 9.1 | 28 @ 10mA | 5 | 45 |
| MM1W10 | FHU | 9.50 - 10.5 | 10 | 25 @ 10mA | 5 | 40 |
| MM1W11 | FHV | 10.4 - 11.6 | 11 | 23 @ 5mA | 5 | 35 |
| MM1W12 | FHW | 11.4 - 12.6 | 12 | 21 @ 5mA | 5 | 30 |
| MM1W13 | FHX | 12.4 - 14.1 | 13 | 19 @ 5mA | 5 | 27 |
| MM1W15 | FHZ | 13.8 - 15.8 | 15 | 17 @ 5mA | 5 | 25 |
| MM1W16 | FJA | 15.2 - 17.1 | 16 | 16 @ 5mA | 5 | 23 |
| MM1W18 | FJF | 16.8 - 19.2 | 18 | 14 @ 5mA | 5 | 21 |
| MM1W20 | FJG | 19.0 - 21.2 | 20 | 13 @ 5mA | 5 | 20 |
| MM1W22 | FJK | 20.8 - 23.3 | 22 | 12 @ 5mA | 5 | 18 |
| MM1W24 | FJL | 22.8 - 26.0 | 24 | 11 @ 5mA | 5 | 17 |
| MM1W27 | FJN | 25.3 - 28.9 | 27 | 9.5 @ 5mA | 5 | 15 |
| MM1W30 | FJQ | 28.2 - 32.0 | 30 | 8.5 @ 5mA | 5 | 14 |
| MM1W33 | FJR | 31.3 - 34.9 | 33 | 7.5 @ 5mA | 5 | 12 |
| MM1W36 | FJS | 34.2 - 37.9 | 36 | 7.0 @ 5mA | 5 | 11 |
| MM1W39 | FJT | 37.2 - 41.5 | 39 | 6.5 @ 5mA | 5 | 10 |
| MM1W43 | FLG | 40.9 - 45.6 | 43 | 6.0 @ 5mA | 5 | 9.0 |
| MM1W47 | FLJ | 44.9 - 49.8 | 47 | 5.5 @ 5mA | 5 | 8.0 |
| MM1W51 | FLK | 48.6 - 54.0 | 51 | 5.0 @ 5mA | 5 | 7.0 |
| MM1W56 | FLL | 53.6 - 58.8 | 56 | 4.5 @ 5mA | 5 | 6.5 |
| MM1W62 | FLN | 58.9 - 65.6 | 62 | 4.0 @ 5mA | 5 | 5.0 |
| MM1W68 | FLO | 64.6 - 71.7 | 68 | 3.7 @ 3.5mA | 5 | 4.0 |
| MM1W75 | FLQ | 71.2 - 78.8 | 75 | 3.3 @ 3.5mA | 5 | 3.5 |
| MM1W82 | FLR | 77.9 - 87.0 | 82 | 3.0 @ 3.5mA | 5 | 3.1 |
| MM1W91 | FLT | 86.0 - 96.0 | 91 | 2.8 @ 3.1mA | 5 | 2.8 |
| MM1W100 | FLU | 95.0 - 105 | 100 | 2.5 @ 3.1mA | 5 | 2.5 |
| MM1W110 | FLV | 104 - 116 | 110 | 2.3 @ 2.8mA | 5 | 2.3 |
| MM1W120 | FLW | 114 - 127 | 120 | 2.0 @ 2.8mA | 5 | 2.0 |
| MM1W135 | FLX | 125 - 142 | 135 | 1.9 @ 2.8mA | 5 | 1.9 |
| MM1W150 | FLZ | 140 - 157 | 150 | 1.7 @ 2.8mA | 5 | 1.7 |
| MM1W165 | FPA | 155 - 172 | 165 | 1.6 @ 2.8mA | 5 | 1.6 |
| MM1W180 | FPF | 170 - 191 | 180 | 1.4 @ 2.8mA | 5 | 1.4 |
| MM1W200 | FPG | 189 - 211 | 200 | 1.2 @ 2.8mA | 5 | 1.2 |
| MM1W220 | FPK | 209 - 231 | 220 | 1.0 @ 2.8mA | 5 | 1.0 |
| MM1W240 | FPL | 229 - 251 | 240 | 1.0 @ 2.8mA | 5 | 1.0 |
| MM1W260 | FPM | 249 - 271 | 260 | 1.0 @ 2.8mA | 5 | 1.0 |
| MM1W280 | FPN | 269 - 291 | 280 | 1.0 @ 2.8mA | 5 | 1.0 |
| MM1W300 | FPQ | 289 - 315 | 300 | 1.0 @ 2.8mA | 5 | 1.0 |
| MM1W330 | FLR | 313 - 346 | 330 | 1.0 @ 2.8mA | 5 | 1.0 |
2510281852_Shikues-MM1W43_C5356474.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
