30V Complementary MOSFET Siliup SP6602CTS in SOT23 6L Package Perfect for Battery Switch and DC DC Converter Circuits

Key Attributes
Model Number: SP6602CTS
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A;2.7A
RDS(on):
30mΩ@10V;60mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF;57pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
60pF;72pF
Input Capacitance(Ciss):
420pF;501pF
Pd - Power Dissipation:
1.15W
Gate Charge(Qg):
9nC@4.5V;9nC@10V
Mfr. Part #:
SP6602CTS
Package:
SOT-23-6L
Product Description

Product Overview

The SP6602CTS is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP6602CTS
  • Package Type: SOT-23-6L
  • Complementary MOSFET: Yes

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Value P-Channel Conditions P-Channel Value Unit
Drain-Source Voltage V(BR)DSS - 30V - -30V V
VGS=0V , ID=250A - VGS=0V , ID=250A - V
Static Drain-Source On-Resistance RDS(on) VGS=10V , ID=3.6A 30m (Typ.) VGS=-10V , ID=-3A 60m (Typ.) m
VGS=4.5V , ID=3A 40m (Typ.) VGS=-4.5V , ID=-2A 80m (Typ.) m
VGS=10V , ID=3.6A 45m (Max.) VGS=-10V , ID=-3A 90m (Max.) m
VGS=4.5V , ID=3A 60m (Max.) VGS=-4.5V , ID=-2A 120m (Max.) m
Continuous Drain Current ID (Ta=25) 3.5A (Ta=25) -2.7A A
(Note 1) (See Note 1) (Note 1) (See Note 1) A
Pulsed Drain Current IDM (Ta=25) 14A (Ta=25) -10.8A A
(Note 1) (See Note 1) (Note 1) (See Note 1) A
Power Dissipation PD (Ta=25) 1.15W (Ta=25) 1.15W W
Thermal Resistance RJA Junction-to-Ambient 108.7 /W Junction-to-Ambient 108.7 /W /W
Storage Temperature Range TSTG - -55 to 150 - -55 to 150
Operating Junction Temperature Range TJ - -55 to 150 - -55 to 150
Gate-Source Voltage VGS - 20V - 20V V
(Note 1) (See Note 1) (Note 1) (See Note 1) V
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250A 1.0 to 2.2V VDS=VGS , ID=-250A -1.0 to -2.4V V
(Typ.) 1.5V (Typ.) -1.5V V
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 420pF (Typ.) VDS=-15V , VGS=0V , f=1MHz 501pF (Typ.) pF
- - - - pF
Output Capacitance Coss VDS=15V , VGS=0V , f=1MHz 60pF (Typ.) VDS=-15V , VGS=0V , f=1MHz 72pF (Typ.) pF
Reverse Transfer Capacitance Crss VDS=15V , VGS=0V , f=1MHz 53pF (Typ.) VDS=-15V , VGS=0V , f=1MHz 57pF (Typ.) pF
Total Gate Charge Qg VDS=15V , VGS=4.5V , ID=3A 9nC (Typ.) VDS=-15V , VGS=-10V , ID=-5A 9nC (Typ.) nC
- - - - nC
Gate-Source Charge Qgs VDS=15V , VGS=4.5V , ID=3A 1.9nC (Typ.) VDS=-15V , VGS=-10V , ID=-5A 1.5nC (Typ.) nC
Gate-Drain Charge Qgd VDS=15V , VGS=4.5V , ID=3A 2.1nC (Typ.) VDS=-15V , VGS=-10V , ID=-5A 2.3nC (Typ.) nC
Turn-On Delay Time td(on) VDD=15V VGS=10V , RG=3.3 , ID=4A 5nS (Typ.) VDD=-15V VGS=-10V , RG=3 , ID=-1A 8.6nS (Typ.) nS
- - - - nS
Turn-On Rise Time tr VDD=15V VGS=10V , RG=3.3 , ID=4A 11nS (Typ.) VDD=-15V VGS=-10V , RG=3 , ID=-1A 5.0nS (Typ.) nS
Turn-Off Delay Time td(off) VDD=15V VGS=10V , RG=3.3 , ID=4A 14nS (Typ.) VDD=-15V VGS=-10V , RG=3 , ID=-1A 28.2nS (Typ.) nS
Turn-Off Fall Time tf VDD=15V VGS=10V , RG=3.3 , ID=4A 2.1nS (Typ.) VDD=-15V VGS=-10V , RG=3 , ID=-1A 13.5nS (Typ.) nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2V (Typ.) VGS=0V , IS=-1A , TJ=25 -1.2V (Typ.) V
- - - - V

Package Information (SOT-23-6L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E 1.500 1.700 0.059 0.067
E1 2.650 2.950 0.104 0.116
e (BSC) 0.950 (BSC) 0.037
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
0 8 0 8

Order Information

Device Package Unit/Tape
SP6602CTS SOT-23-6L 3000

2504101957_Siliup-SP6602CTS_C41354834.pdf

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