Complementary MOSFET Siliup SP3033CNJ 30V with Fast Switching and 100 Percent Avalanche Energy Test
Key Attributes
Model Number:
SP3033CNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A;8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V;42mΩ@4.5V;30mΩ@10V;45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF;112pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
235pF;850pF
Output Capacitance(Coss):
45pF;116pF
Pd - Power Dissipation:
10W
Gate Charge(Qg):
1nC@10V;13nC@10V
Mfr. Part #:
SP3033CNJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP3033CNJ is a 30V complementary MOSFET designed for efficient power management applications. It features fast switching speeds and a surface mount package, making it suitable for DC-DC converters and motor control systems. This ROHS Compliant and Halogen-Free component is 100% tested for single pulse avalanche energy, ensuring reliability and performance in demanding environments.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP3033CNJ
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Rating | P-Channel Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 30V | -30V | |
| RDS(on) Typ. @ 10V | RDS(on)TYP | 28m | ||
| RDS(on) Typ. @ 4.5V | RDS(on)TYP | 42m | ||
| RDS(on) Typ. @ -10V | RDS(on)TYP | 30m | ||
| RDS(on) Typ. @ -4.5V | RDS(on)TYP | 45m | ||
| Continuous Drain Current | ID | 7A | -8A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | 30 | -30 | V |
| Gate-Source Voltage | VGS | 20 | 20 | V |
| Continuous Drain Current (Tc=25C) | ID | 7 | -8 | A |
| Pulse Drain Current Tested | IDM | 28 | -32 | A |
| Single pulsed avalanche energy | EAS | 9 | 36 | mJ |
| Power Dissipation (Tc=25C) | PD | 10 | W | |
| Thermal Resistance Junction-to-Case | RJC | 12.5 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | - | V |
| Drain-Source Leakage Current | IDSS | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.2 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | - 28 - 38 | - | m |
| Input Capacitance | Ciss | - 235 - | - | pF |
| Output Capacitance | Coss | - 45 - | - | pF |
| Reverse Transfer Capacitance | Crss | - 17 - | - | pF |
| Total Gate Charge | Qg | - 1 - | - | nC |
| Gate-Source Charge | Qgs | - 1.2 - | - | |
| Gate-Drain Charge | Qgd | - 1.3 - | - | |
| Turn-On Delay Time | Td(on) | - 4 - | - | nS |
| Rise Time | Tr | - 25 - | - | nS |
| Turn-Off Delay Time | Td(off) | - 7 - | - | nS |
| Fall Time | Tf | - 19 - | - | nS |
| Diode Forward Voltage | VSD | - - 1.2 | - | V |
| Maximum Body-Diode Continuous Current | IS | - - 7 | - | A |
| Reverse recover time | Trr | - 16 - | - | nS |
| Reverse recovery charge | Qrr | - 1.9 - | - | nC |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | - | -30 | V |
| Drain-Source Leakage Current | IDSS | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | - | -1.0 -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | - | - 30 - 40 | m |
| Input Capacitance | Ciss | - | - 850 - | pF |
| Output Capacitance | Coss | - | - 116 - | pF |
| Reverse Transfer Capacitance | Crss | - | - 112 - | pF |
| Total Gate Charge | Qg | - | - 13 - | nC |
| Gate-Source Charge | Qgs | - | - 2.6 - | |
| Gate-Drain Charge | Qgd | - | - 2.2 - | |
| Turn-On Delay Time | Td(on) | - | - 7.5 - | nS |
| Rise Time | Tr | - | - 5.5 - | nS |
| Turn-Off Delay Time | Td(off) | - | - 19 - | nS |
| Fall Time | Tf | - | - 7 - | nS |
| Diode Forward Voltage | VSD | - | - -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - -8 | A |
| Reverse recover time | Trr | - | - 0.9 - | nS |
| Reverse recovery charge | Qrr | - | - 7 - | nC |
| Package Information | ||||
| Package Type | PDFN3X3-8L | |||
| Dimensions (mm) | A: 0.650-0.850, A1: 0.152 REF, A2: 0~0.05, D: 2.900-3.100, D1: 0.935-1.135, D2: 0.280-0.480, E: 2.900-3.100, E1: 3.150-3.450, E2: 1.535-1.935, b: 0.200-0.400, e: 0.550-0.750, L: 0.300-0.500, L1: 0.180-0.480, L2: 0~0.100, L3: 0~0.100, H: 0.315-0.515, : 9-13 | |||
| Order Information | SP3033CNJ (PDFN3X3-8L, 5000 units/tape) | |||
Applications:
- DC-DC Converters
- Motor Control
Circuit Diagram: PDFN3X3-8L
Marking: 3033C : Device Code, * : Month Code
2504101957_Siliup-SP3033CNJ_C22385434.pdf
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