150V N Channel MOSFET Siliup SP015N06GHTD Featuring Low Gate Charge and Split Gate Trench Technology
Key Attributes
Model Number:
SP015N06GHTD
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
5.24nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP015N06GHTD
Package:
TO-263
Product Description
Product Overview
The SP015N06GHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP015N06GH
- Package: TO-263
- Technology: Advanced Split Gate Trench
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 150 | V | |||
| RDS(on) Typ | RDS(on)TYP | @10V | 6.2 | m | ||
| Continuous Drain Current | ID | 140 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | 140 | A | |||
| Continuous Drain Current (Tc=100) | ID | 95 | A | |||
| Pulsed Drain Current | IDM | 560 | A | |||
| Single Pulse Avalanche Energy | EAS | 812 | mJ | |||
| Power Dissipation (Tc=25) | PD | 230 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 6.2 | 7.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 5240 | - | pF |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=70A | - | 70 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | nC | |
| Gate-Drain Charge | Qgd | - | 20 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 70A, RG = 6 | - | 24 | - | nS |
| Rise Time | tr | - | 35 | - | ||
| Turn-Off Delay Time | td(off) | - | 46 | - | ||
| Fall Time | tf | - | 15 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 140 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 98 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 217 | - | nC | |
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
2504101957_Siliup-SP015N06GHTD_C22385371.pdf
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