20V Complementary MOSFET Siliup SP2012CNJ Featuring Low RDSon and Gate Charge for Power Applications
Key Attributes
Model Number:
SP2012CNJ
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
31mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
14W
Gate Charge(Qg):
40.1nC@4.5V
Mfr. Part #:
SP2012CNJ
Package:
PDFN3X3-8L
Product Description
Product Overview
The SP2012CNJ is a 20V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed with TrenchFET technology for excellent RDS(on) and low gate charge. This device is suitable for applications such as bridges and inverters. It is available in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2012CNJ
- Complementary MOSFET: Yes
- Package: PDFN3X3-8L
- Marking: 2012C = Device code; * = Month Code
Technical Specifications
| Product Summary | N-Channel | P-Channel | |
| V(BR)DSS | 20V | -20V | |
| RDS(on)TYP | 15m@10V, 19m@4.5V | 25m@-10V, 30m@-4.5V | |
| ID | 20A | -19A | |
| Parameter | Symbol | Value | Unit | |
| N-Channel | P-Channel | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | 20 | -20 | V |
| Gate-Source Voltage | VGS | 12 | 12 | V |
| Continuous Drain Current (t10s) | ID | 20 | -19 | A |
| Power Dissipation (t10s) | PD | 14 | W | |
| Thermal Resistance from Junction to Cassette (t10s) | RJC | 8.9 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55 ~ +150 | ||
| N-Channel Electrical Characteristics (TA=25C, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 (VGS=0V, ID=250A) | V | |
| Zero Gate Voltage Drain Current | IDSS | 1 (VDS=20V, VGS=0V) | A | |
| Gate-Body Leakage Current | IGSS | 100 (VGS=12V, VDS=0V) | nA | |
| Gate Threshold Voltage | VGS(th) | 0.5 ~ 1.0 (VDS=VGS, ID=250A) | V | |
| Drain-Source On-State Resistance | RDS(ON) | 15 (VGS=4.5V, ID=8A) 19 (VGS=2.5V, ID=6A) | m | |
| Input Capacitance | Ciss | 630 (VDS=10V, VGS=0V, f=1.0MHz) | pF | |
| Output Capacitance | Coss | 131 (VDS=10V, VGS=0V, f=1.0MHz) | pF | |
| Reverse Transfer Capacitance | Crss | 112 (VDS=10V, VGS=0V, f=1.0MHz) | pF | |
| Turn-on Delay Time | td(on) | 4.2 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0) | nS | |
| Turn-on Rise Time | tr | 16 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0) | nS | |
| Turn-Off Delay Time | td(off) | 18 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0) | nS | |
| Turn-Off Fall Time | tf | 7.4 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0) | nS | |
| Total Gate Charge | Qg | 12.6 (VGS=4.5V, VDS=12V, ID=10A) | nC | |
| Gate-Source Charge | Qgs | 2.2 (VGS=4.5V, VDS=12V, ID=10A) | nC | |
| Gate-Drain Charge | Qgd | 3.1 (VGS=4.5V, VDS=12V, ID=10A) | nC | |
| Diode Forward Voltage | VSD | 1.2 (VGS=0V, IS=1A) | V | |
| P-Channel Electrical Characteristics (TA=25C, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | -20 (VGS=0V, ID=-250uA) | V | |
| Drain-Source Leakage Current | IDSS | 1 (VDS=-20V, VGS=0V, TJ=25) | uA | |
| Gate-Source Leakage Current | IGSS | 100 (VGS=12V, VDS=0V) | nA | |
| Gate Threshold Voltage | VGS(th) | -0.5 ~ -1.0 (VGS=VDS, ID =-250uA) | V | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 (VGS=-4.5V, ID=-6A) 30 (VGS=-2.5V, ID=-4A) | m | |
| Input Capacitance | Ciss | 868 (VDS=-10V, VGS=0V, f=1MHz) | pF | |
| Output Capacitance | Coss | 151 (VDS=-10V, VGS=0V, f=1MHz) | pF | |
| Reverse Transfer Capacitance | Crss | 115 (VDS=-10V, VGS=0V, f=1MHz) | pF | |
| Total Gate Charge | Qg | 40.1 (VDS=-10V, VGS=-4.5V, ID=-12A) | nC | |
| Gate-Source Charge | Qgs | 8.3 (VDS=-10V, VGS=-4.5V, ID=-12A) | nC | |
| Gate-Drain Charge | Qgd | 9.1 (VDS=-10V, VGS=-4.5V, ID=-12A) | nC | |
| Turn-On Delay Time | Td(on) | 9 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A) | ns | |
| Rise Time | Tr | 19 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A) | ns | |
| Turn-Off Delay Time | Td(off) | 75 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A) | ns | |
| Fall Time | Tf | 48 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A) | ns | |
| Diode Forward Voltage | VSD | -1.2 (VGS=0V, IS=-1A, TJ=25) | V | |
| PDFN3X3-8L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. (0.006 REF.) | |||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 0.935 | 1.135 | 0.037 | 0.045 |
| D2 | 0.280 | 0.480 | 0.011 | 0.019 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
2410311049_Siliup-SP2012CNJ_C42372336.pdf
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