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quality Power Management MOSFET Siliup 2N7002KNC N Channel Type with 60V Drain Source Voltage and ESD Protection factory
quality Power Management MOSFET Siliup 2N7002KNC N Channel Type with 60V Drain Source Voltage and ESD Protection factory

Power Management MOSFET Siliup 2N7002KNC N Channel Type with 60V Drain Source Voltage and ESD Protection

Key Attributes
Model Number: 2N7002KNC
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
4Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
300pC@4.5V
Mfr. Part #:
2N7002KNC
Package:
DFN1006-3L
Product Description

Product Overview

The 2N7002KNC is a 60V N-Channel MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. It features a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is capable of Cu wire bonding and is ESD protected (HBM 2KV). It is designed for power management applications in notebooks, portable equipment, and battery-powered systems.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Model: 2N7002KNC
  • Technology: N-Channel MOSFET
  • ESD Protection: HBM 2KV
  • Wire Bonding: Capable of Cu wire bonding

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 60 V
On-Resistance (Typ.) RDS(on)TYP @10V 1.1
On-Resistance (Typ.) RDS(on)TYP @4.5V 1.4
Continuous Drain Current ID 340 mA
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 340 mA
Power Dissipation PD 0.15 W
Thermal Resistance Junction to Ambient RJA 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 60 V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 1.5 2.5 V
Gate-Body Leakage IGSS VDS=0V, VGS=20V 10 A
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 A
Drain-Source On-Resistance RDS(ON) VGS=10V, ID=200mA 1.1 3
Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=200mA 1.4 4
Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=250mA 0.3 nC
Gate-Source Charge Qgs 0.2
Gate-Drain Charge Qgd 0.08
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 30 50 pF
Output Capacitance Coss 4.2 25 pF
Reverse Transfer Capacitance Crss 2.9 5 pF
Turn-On Delay Time td(on) VDD=30V,ID=200mA, VGEN=10V, RG =25 3.9 ns
Turn-On Rise Time tR 3.4 ns
Turn-Off Delay Time td(off) 15.7 ns
Turn-Off Fall Time tF 9.9 ns
Diode Forward Voltage VSD IS=200mA, VGS=0V 0.82 1.3 V
Package Information: DFN1006-3L
Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 0.46 0.51
A1 0 0.05
b 0.45 0.55
b1 0.1 0.2
c 0.08 0.18
D 0.95 1.05
D1 0.65
E 0.55 0.65
E1 0.325
L 0.2 0.3
L1 0.2 0.3
R 0.05 0.15

2411212332_Siliup-2N7002KNC_C41355120.pdf

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