Low Gate Charge and Fast Switching 650V N Channel Planar MOSFET Siliup SP8N65TQ for DC DC Converters
Key Attributes
Model Number:
SP8N65TQ
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
-
Output Capacitance(Coss):
117pF
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
1.233nF
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
SP8N65TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP8N65TQ is a 650V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET offers fast switching speeds, low gate charge, and low on-resistance (RDS(on)). It is ideal for use in DC-DC converters and synchronous rectification circuits. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP8N65TQ
- Technology: Planar MOSFET
- Channel Type: N-Channel
- Package: TO-220-3L
- Marking: 8N65 (Device Code), *: Week Code
Technical Specifications
| Product Summary | |||
| V(BR)DSS | RDS(on)TYP | ID | Feature |
| 650V | 0.8@10V | 8A | Fast Switching, Low Gate Charge and Rdson, 100% Single Pulse avalanche energy Test |
| Order Information | |||
| Device | Package | Unit/Tube | |
| SP8N65TQ | TO-220-3L | 50 | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDS | 650 | V |
| Gate-Source Voltage | VGS | 30 | V |
| Continuous Drain Current (Tc=25) | ID | 8 | A |
| Continuous Drain Current (Tc=100) | ID | 5.3 | A |
| Pulsed Drain Current | IDM | 32 | A |
| Single Pulse Avalanche Energy | EAS | 500 | mJ |
| Power Dissipation (Tc=25) | PD | 110 | W |
| Thermal Resistance Junction-to-Case | RJC | 1.13 | /W |
| Storage Temperature Range | TSTG | -55 to 150 | |
| Operating Junction Temperature Range | TJ | -55 to 150 | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Characteristics | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3.0 | 4.0 | 5.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 4A | - | 0.8 | 1.1 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | - | 1233 | - | pF |
| Output Capacitance | Coss | - | - | 117 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 15 | - | pF |
| Total Gate Charge | Qg | VDS=325V , VGS=10V , ID=8A | - | 28 | - | nC |
| Gate-Source Charge | Qgs | - | - | 6 | - | nC |
| Gate-Drain Charge | Qg d | - | - | 11 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 325V, VDS =6V, RG=9, ID=8A | - | 13 | - | nS |
| Rise Time | tr | - | - | 15 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 41 | - | nS |
| Fall Time | tf | - | - | 21 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 8 | A |
| Body Diode Reverse Recovery Time | Trr | IS = 8A, dIF/dt = 100A/us | - | 560 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | - | 3.7 | - | uC |
| Package Information (TO-220-3L) | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
2504101957_Siliup-SP8N65TQ_C42372385.pdf
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