Surface Mount 30V MOSFET Siliup SP3012CNJ ROHS Compliant Halogen Free for DC DC Converters Motor Control

Key Attributes
Model Number: SP3012CNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
16A;12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
131pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.317nF
Pd - Power Dissipation:
16W
Gate Charge(Qg):
9.6nC@4.5V;21nC@10V
Mfr. Part #:
SP3012CNJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP3012CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this ROHS Compliant & Halogen-Free device offers fast switching speeds and is 100% Single Pulse avalanche energy tested. It is ideal for use in DC-DC converters and motor control applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP3012CNJ
  • Certifications: ROHS Compliant & Halogen-Free
  • Package Type: PDFN3X3-8L
  • Device Code: 3012C

Technical Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage V(BR)DSS 30V -30V V
RDS(on) Typ. @ 10V RDS(on) 11m - m
RDS(on) Typ. @ 4.5V RDS(on) 16m - m
RDS(on) Typ. @ -10V RDS(on) - 21m m
RDS(on) Typ. @ -4.5V RDS(on) - 30m m
Continuous Drain Current (Tc=25C) ID 16A -12A A
Pulse Drain Current Tested IDM 64A -48A A
Single pulsed avalanche energy EAS 42mJ 49mJ mJ
Power Dissipation (Tc=25C) PD 16W 16W W
Drain-Source Breakdown Voltage BVDSS 30V -30V V
Gate-Source Voltage VGS 20V 20V V
Gate Threshold Voltage VGS(th) 1.0 - 2.5V -1.0 - -2.5V V
Input Capacitance Ciss 940pF 1070pF pF
Output Capacitance Coss 131pF 146pF pF
Reverse Transfer Capacitance Crss 109pF 142pF pF
Total Gate Charge Qg 9.6nC 21nC nC
Turn-On Delay Time Td(on) 4.2nS 7nS nS
Rise Time Tr 8.2nS 9nS nS
Turn-Off Delay Time Td(off) 31nS 30nS nS
Fall Time Tf 4nS 18nS nS
Diode Forward Voltage VSD 1.2V -1.2V V
Maximum Body-Diode Continuous Current IS 16A -12A A
Reverse recover time Trr 1.2nS 50nS nS
Reverse recovery charge Qrr 9nC 31nC nC
Package Dimensions (mm) PDFN3X3-8L
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0 - 0.05 0 - 0.002
D 2.900 - 3.100 0.114 - 0.122
D1 0.935 - 1.135 0.037 - 0.045
D2 0.280 - 0.480 0.011 - 0.019
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0 - 0.100 0 - 0.004
L3 0 - 0.100 0 - 0.004
H 0.315 - 0.515 0.012 - 0.020
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2504101957_Siliup-SP3012CNJ_C22385431.pdf

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