S1M075120H2 Silicon Carbide MOSFET for Booster Converters Switch Mode Power Supplies and EV Chargers
Key Attributes
Model Number:
S1M075120H2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
44A
RDS(on):
60mΩ@18V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Input Capacitance(Ciss):
1.037nF
Pd - Power Dissipation:
224W
Gate Charge(Qg):
40nC
Mfr. Part #:
S1M075120H2
Package:
TO-247-4L
Product Description
Product Overview
The S1M075120H2 is a 1200V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. This MOSFET features high blocking voltage with low on-resistance and a fast intrinsic diode with low reverse recovery. Its benefits include reduced cooling effort and requirements, efficiency improvement, increased power density, and the ability to increase system switching frequency. It is suitable for applications such as on-board chargers/PFC, EV battery chargers, booster/DC-DC converters, and switch mode power supplies.
Product Attributes
- Brand: Qingchun Semiconductor (Ningbo) Co., Ltd.
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Package: TO-247-4L
- Compliance: Halogen free, RoHS compliant
Technical Specifications
| Model | VDS | IDS (TC = 25, Rth (j-c,max)) | RDS(ON), typ (VGS = 15V, ID = 20A, TJ = 25) | Tj,max | Package |
|---|---|---|---|---|---|
| S1M075120H2 | 1200 V | 44 A | 75 m | 175 | TO247-4L |
Key Performance and Ratings
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+15 | V | Recommended operational values | |
| ID | Continuous drain current | 44 | A | VGS = 15V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 31 | A | VGS = 15V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 88 | A | Pulse width tP limited by Tj,max | Fig.22 |
| PD | Power dissipation | 224 | W | TC= 25C, TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| Rth(j-c) | Thermal resistance from junction to case | 0.7 | C/W | Fig.21 | |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 / 2.8 / 3.6 | V | VDS = VGS, ID = 5mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.1 | V | VDS = VGS, ID = 5mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 1200V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 15V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 75 | m | VGS = 15V, ID = 20A | Fig.4,5,6 |
| RDS(on) | Current drain-source on-state resistance | 110 | m | VGS = 15V, ID = 20A, TJ = 175C | |
| Ciss | Input capacitance | 1037 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f = 1MHz | Fig.17,18 |
| Coss | Output capacitance | 65 | pF | ||
| Crss | Reverse capacitance | 3.8 | pF | ||
| Eon | Turn on switching energy | 112 | J | VDS = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH | Fig.26 |
| Eoff | Turn off switching energy | 25 | J | ||
| tdon | Turn on delay time | 8.8 | ns | Fig.27, 28 | |
| tr | Rise time | 10.5 | ns | ||
| tdoff | Turn off delay time | 15 | ns | ||
| tf | Fall time | 8.4 | ns | ||
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.5 | V | VGS = -4V, ISD = 10A TJ = 175C | |
| IS | Continuous diode forward current | 44 | A | VGS = -4V, Tc = 25C | Note1 |
| trr | Reverse recovery time | 39 | nS | VR = 800V, VGS = -4V ID = 20A di/dt = 2436A/S TJ = 150C | |
| Qrr | Reverse recovery charge | 321 | nC | ||
| Irrm | Peak reverse recovery current | 16.5 | A | ||
| Qgs | Gate source charge | 8.9 | nC | VDS = 800V, VGS = -4/+15V ID = 20A | Fig.12 |
| Qgd | Gate drain charge | 25 | nC | ||
| Qg | Gate charge | 40 | nC |
2410121937_Sichainsemi-S1M075120H2_C22363608.pdf
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