Power Switching N Channel MOSFET Siliup SP010N70P8 100V Low Gate Charge and Low RDSon for UPS Systems

Key Attributes
Model Number: SP010N70P8
Product Custom Attributes
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.1nF
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SP010N70P8
Package:
SOP-8L
Product Description

Product Overview

The SP010N70P8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, this MOSFET features fast switching, low gate charge, and low RDS(on). It is suitable for hard switched and high frequency circuits, as well as Uninterruptible Power Supply (UPS) systems. The device is tested for 100% single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP010N70P8
  • Channel Type: N-Channel
  • Package Type: SOP-8L
  • Device Code: 010N70

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS 100 V
On-Resistance (Typical) RDS(on)TYP @10V 70 m
On-Resistance (Typical) RDS(on)TYP @4.5V 85 m
Continuous Drain Current ID 4 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25,unless otherwise noted) 100 V
Gate-Source Voltage VGS (Ta=25,unless otherwise noted) 20 V
Continuous Drain Current ID (Ta=25,unless otherwise noted) 4 A
Pulsed Drain Current IDM (Ta=25,unless otherwise noted) 16 A
Power Dissipation PD (Ta=25,unless otherwise noted) 1.5 W
Thermal Resistance (Junction-to-Ambient) RJA (Ta=25,unless otherwise noted) 83 /W
Storage Temperature Range TSTG (Ta=25,unless otherwise noted) -55 150
Operating Junction Temperature Range TJ (Ta=25,unless otherwise noted) -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 100 - - V
Drain-Source Leakage Current IDSS VDS=80V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.2 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=2A - 70 100 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=1A - 85 110 m
Dynamic Characteristics
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 1100 - pF
Output Capacitance Coss VDS=50V , VGS=0V , f=1MHz - 55 - pF
Reverse Transfer Capacitance Crss VDS=50V , VGS=0V , f=1MHz - 40 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=3A - 12 - nC
Gate-Source Charge Qgs VDS=50V , VGS=10V , ID=3A - 2.9 - nC
Gate-Drain Charge Qgd VDS=50V , VGS=10V , ID=3A - 1.8 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=50V VGS=10V , RG=3, ID=3A - 3.9 - nS
Rise Time Tr VDD=50V VGS=10V , RG=3, ID=3A - 26 - nS
Turn-Off Delay Time Td(off) VDD=50V VGS=10V , RG=3, ID=3A - 16.2 - nS
Fall Time Tf VDD=50V VGS=10V , RG=3, ID=3A - 8.9 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A - - 1.2 V
Package Information
Package Type SOP-8L
Order Information Device Package Unit/Tape
SP010N70P8 SOP-8L 4000
SOP-8L Dimensions (In Millimeters)
Symbol Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
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