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quality N Channel MOSFET Siliup SP40N06P8 with 40 volts drain source voltage and avalanche energy capability factory
quality N Channel MOSFET Siliup SP40N06P8 with 40 volts drain source voltage and avalanche energy capability factory

N Channel MOSFET Siliup SP40N06P8 with 40 volts drain source voltage and avalanche energy capability

Key Attributes
Model Number: SP40N06P8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
15A
RDS(on):
6mΩ@10V;9mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
135pF
Number:
1 N-channel
Output Capacitance(Coss):
168pF
Input Capacitance(Ciss):
2.45nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
SP40N06P8
Package:
SOP-8L
Product Description

Product Overview

The SP40N06P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET is designed for power switching applications, offering fast switching speeds, low gate charge, and low RDS(on) at various gate voltages (6m@10V, 9m@4.5V). It is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. The device features 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N06P8
  • Device Code: 40N06
  • Package: SOP-8L
  • Technology: N-Channel MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 15 A
Pulsed Drain Current IDM 60 A
Single pulsed avalanche energy EAS 81 mJ
Power Dissipation PD 3 W
Thermal Resistance Junction-to-Ambient RJA 41.7 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=10A - 6 9 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=8A - 9 13 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 2450 - pF
Output Capacitance Coss - 168 - pF
Reverse Transfer Capacitance Crss - 135 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=10A - 45 - nC
Gate-Source Charge Qgs - 11 - nC
Gate-Drain Charge Qg d - 11 - nC
Turn-On Delay Time Td(on) VDD=20V VGS=10V , RG=3, ID=10A - 11 - nS
Rise Time Tr - 29 - nS
Turn-Off Delay Time Td(off) - 42 - nS
Fall Time Tf - 7 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 15 A
Reverse Recovery Time Trr IS=10A, di/dt=100A/us, TJ=25 - 12 - nS
Reverse Recovery Charge Qrr - 7 - nC
Symbol Dimensions In Millimeters Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e REF. 1.27
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

2504101957_Siliup-SP40N06P8_C41355045.pdf

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