N Channel MOSFET Siliup SP30N27T8 30 Volt 5.8 Amp Continuous Drain Current SOT 89 3L Package
Key Attributes
Model Number:
SP30N27T8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 N-channel
Output Capacitance(Coss):
68pF
Input Capacitance(Ciss):
745pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
SP30N27T8
Package:
SOT-89-3L
Product Description
Product Overview
The SP30N27T8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-89-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N27T8
- Device Code: 30N27
- Package Type: SOT-89-3L
- Technology: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | @10V | 27 | m | |||
| RDS(on) | @4.5V | 30 | m | |||
| RDS(on) | @2.5V | 40 | m | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Pulse Drain Current | IDM | Tested | 23.2 | A | ||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 83 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1.0 | 1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =5.8A | - | 27 | 35 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =5A | - | 30 | 40 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID =4A | - | 40 | 50 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 745 | - | pF |
| Output Capacitance | Coss | - | 68 | - | ||
| Reverse Transfer Capacitance | Crss | - | 53 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=3A | - | 18 | - | nC |
| Gate-Source Charge | Qgs | - | 3 | - | ||
| Gate-Drain Charge | Qg | - | 2.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=3 , ID=3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 11 | - | ||
| Turn-Off Delay Time | td(off) | - | 25 | - | ||
| Turn-Off Fall Time | tf | - | 3 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Outline (SOT-89-3L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.400 | 1.600 | ||||
| b | 0.320 | 0.520 | ||||
| b1 | 0.400 | 0.580 | ||||
| c | 0.350 | 0.440 | ||||
| D | 4.400 | 4.600 | ||||
| D1 | 1.550 | REF. | ||||
| D2 | 1.750 | REF. | ||||
| E | 2.300 | 2.600 | ||||
| E1 | 3.940 | 4.250 | ||||
| E2 | 1.900 | REF. | ||||
| e | 1.500 | TYP. | ||||
| e1 | 3.000 | TYP. | ||||
| L | 0.900 | 1.200 | ||||
| 45 | ||||||
2504101957_Siliup-SP30N27T8_C41354917.pdf
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