Complementary MOSFET 40V Siliup SP4012CTM Lead Free Device for Battery Protection and Load Switching
Key Attributes
Model Number:
SP4012CTM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A;20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;22mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF;112pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
110pF;204pF
Input Capacitance(Ciss):
1.061nF;1.415nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
25nC@4.5V;23.5nC@4.5V
Mfr. Part #:
SP4012CTM
Package:
TO-252-4L
Product Description
SP4012CTM 40V Complementary MOSFET
Product Overview
The SP4012CTM is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This lead-free, surface-mount device is 100% avalanche energy tested, making it suitable for demanding applications such as battery protection, load switching, and power management. Its complementary nature allows for versatile circuit designs.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4012CTM
- Package Type: TO-252-4L
- Certifications: Lead free product acquired
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| N-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=7A | - | 13 | 16 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 16 | 22 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1061 | - | pF |
| Output Capacitance | Coss | - | - | 110 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 95 | - | pF |
| Total Gate Charge | Qg | VDS=32V , VGS=4.5V , ID=7A | - | 25 | - | nC |
| Gate-Source Charge | Qgs | - | - | 6.3 | - | - |
| Gate-Drain Charge | Qg d | - | - | 4.6 | - | - |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=3, ID=7A | - | 7.8 | - | nS |
| Rise Time | Tr | - | - | 10.7 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 25.8 | - | - |
| Fall Time | Tf | - | - | 4.6 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 25 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 12.5 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 9 | - | nC |
| P-Channel Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.5 | -2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | - | 22 | 28 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | - | 31 | 41 | m |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1415 | - | pF |
| Output Capacitance | Coss | - | - | 204 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 112 | - | pF |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-1A | - | 23.5 | - | nC |
| Gate-Source Charge | Qgs | - | - | 3.4 | - | - |
| Gate-Drain Charge | Qgd | - | - | 4.3 | - | - |
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V , RG=3, ID=-1A | - | 11 | - | nS |
| Rise Time | Tr | - | - | 16.7 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 35 | - | - |
| Fall Time | Tf | - | - | 19 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | -20 | A |
| Reverse Recovery Time | Trr | IS=-15A, di/dt=100A/us, TJ=25 | - | 28 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 36 | - | nC |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 40 (N-Ch) | -40 (P-Ch) | - | V |
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | 20 | - | V |
| Continuous Drain Current (TC=25) | ID | (Ta=25,unless otherwise noted) | 25 (N-Ch) | -20 (P-Ch) | - | A |
| Continuous Drain Current (TC=100) | ID | (Ta=25,unless otherwise noted) | 17 (N-Ch) | -13 (P-Ch) | - | A |
| Pulsed Drain Current | IDM | (Ta=25,unless otherwise noted) | 100 (N-Ch) | -80 (P-Ch) | - | A |
| Single Pulse Avalanche Energy | EAS | (Ta=25,unless otherwise noted) | 29 (N-Ch) | 48 (P-Ch) | - | mJ |
| Power Dissipation (TC=25) | PD | (Ta=25,unless otherwise noted) | 40 | - | - | W |
| Thermal Resistance Junction-to-Case | RJC | (Ta=25,unless otherwise noted) | 3.1 | - | - | /W |
| Storage Temperature Range | TSTG | (Ta=25,unless otherwise noted) | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | (Ta=25,unless otherwise noted) | -55 | - | 150 | |
Package Information (TO-252-4L)
| Symbol | Dimensions In Millimeters | Min. | Max. |
|---|---|---|---|
| A | - | 2.20 | 2.40 |
| A1 | - | 0 | 0.15 |
| b | - | 0.40 | 0.60 |
| b2 | - | 0.50 | 0.80 |
| b3 | - | 5.20 | 5.50 |
| c2 | - | 0.45 | 0.55 |
| D | - | 5.40 | 5.80 |
| D1 | - | 4.57 | - |
| E | - | 6.40 | 6.80 |
| E1 | - | 3.81 | - |
| e | REF. | 1.27 | - |
| F | - | 0.40 | 0.60 |
| H | - | 9.40 | 10.20 |
| L | - | 1.40 | 1.77 |
| L1 | - | 2.40 | 3.00 |
| L4 | - | 0.80 | 1.20 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP4012CTM | TO-252-4L | 2500 |
2504101957_Siliup-SP4012CTM_C22385373.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
