Power Management MOSFET Siliup SP40P25NJ 40V P Channel with Fast Switching Speed and Low On Resistance
Key Attributes
Model Number:
SP40P25NJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
16A
RDS(on):
25mΩ@10V;35mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF
Number:
1 P-Channel
Output Capacitance(Coss):
134pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
1.415nF
Gate Charge(Qg):
23.5nC@10V
Mfr. Part #:
SP40P25NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP40P25NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% Single Pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC Converters and Power Management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P25NJ
- Package: PDFN3X3-8L
- Device Code: 40P25
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |
| On-Resistance (Typical) | RDS(on)TYP | @-10V | 25 | m |
| On-Resistance (Typical) | RDS(on)TYP | @-4.5V | 35 | m |
| Continuous Drain Current | ID | -16 | A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -40 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current (Tc=25C) | ID | -16 | A | |
| Continuous Drain Current (Tc=100C) | ID | -11 | A | |
| Pulse Drain Current Tested | IDM | -64 | A | |
| Single Pulse Avalanche Energy | EAS | 60 | mJ | |
| Power Dissipation (Tc=25C) | PD | 28 | W | |
| Thermal Resistance Junction-to-Case | RJC | 4.5 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 to -2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 25 to 35 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | 35 to 50 | m |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 1415 | pF |
| Output Capacitance | Coss | 134 | pF | |
| Reverse Transfer Capacitance | Crss | 102 | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 23.5 | nC |
| Gate-Source Charge | Qgs | 3.5 | nC | |
| Gate-Drain Charge | Qg d | 3.3 | nC | |
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-6A | 11 | nS |
| Rise Time | Tr | 15.7 | nS | |
| Turn-Off Delay Time | Td(off) | 35 | nS | |
| Fall Time | Tf | 5.5 | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | -16 | A | |
| Reverse recover time | Trr | IS=-15A, di/dt=-100A/us, Tj=25 | 28 | nS |
| Reverse recovery charge | Qrr | 36 | nC | |
| Package Information (Dimensions in Millimeters) | ||||
| Symbol | Dimensions Min. | Dimensions Max. | Dimensions Min. (Inches) | Dimensions Max. (Inches) |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
2504101957_Siliup-SP40P25NJ_C41355199.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
