Complementary mosfet device Siliup SP2038CTS 20V n channel and p channel for power management circuits

Key Attributes
Model Number: SP2038CTS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A;4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V;55mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
54pF;55pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
62pF;75pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
456pF;405pF
Gate Charge(Qg):
6nC@4.5V;5.5nC@4.5V
Mfr. Part #:
SP2038CTS
Package:
SOT-23-6L
Product Description

Product Overview

The SP2038CTS is a 20V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. This device offers complementary N-Channel and P-Channel MOSFETs in a single package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP2038CTS
  • Type: Complementary MOSFET
  • Voltage Rating: 20V (N-Channel), -20V (P-Channel)
  • Package: SOT-23-6L
  • Marking: 2038 (Device Code)
  • Website: www.siliup.com

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Value P-Channel Conditions P-Channel Value Unit
Drain-Source Voltage V(BR)DSS N-Channel 20 P-Channel -20 V
VGS=0V , ID=250A - VGS=0V , ID=250A - V
Static Drain-Source On-Resistance RDS(on) VGS=4.5V , ID=4.5A 25 m (Typ.) VGS=-4.5V , ID=-3A 55 m (Typ.) m
VGS=2.5V , ID=3.5A 35 m (Typ.) VGS=-2.5V , ID=-2A 65 m (Typ.) m
Continuous Drain Current ID N-Channel 5 P-Channel -4 A
(Ta=25) A (Ta=25) A A
Pulsed Drain Current IDM N-Channel 20 P-Channel -16 A
(Ta=25) A (Ta=25) A A
Power Dissipation PD (Ta=25) 1.3 (Ta=25) 1.3 W
Thermal Resistance Junction-to-Ambient RJA 96 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Gate-Source Voltage VGS 12 V
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250A 0.5 to 1.0 VDS=VGS , ID=-250A -0.5 to -1.0 V
Input Capacitance Ciss VDS=10V , VGS=0V , f=1MHz 456 (Typ.) VDS=-10V , VGS=0V , f=1MHz 405 (Typ.) pF
Output Capacitance Coss 62 (Typ.) 75 (Typ.) pF
Reverse Transfer Capacitance Crss 54 (Typ.) 55 (Typ.) pF
Total Gate Charge Qg VDS=10V , VGS=4.5V , ID=2A 6 (Typ.) VDS=-10V , VGS=-4.5V , ID=-3A 5.5 (Typ.) nC
Gate-Source Charge Qgs 1 (Typ.) 1.18 (Typ.) nC
Gate-Drain Charge Qgd 1.4 (Typ.) 1.3 (Typ.) nC
Turn-On Delay Time td(on) VDD=10V VGS=4.5V , RG=2.7 , ID=2A 5 (Typ.) VDD=-10V VGS=-4.5V , RG=3 , ID=-1A 6.4 (Typ.) nS
Turn-On Rise Time tr 13 (Typ.) 22 (Typ.) nS
Turn-Off Delay Time td(off) 65 (Typ.) 35 (Typ.) nS
Turn-Off Fall Time tf 28 (Typ.) 31 (Typ.) nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 (Typ.) VGS=0V , IS=-1A , TJ=25 -1.2 (Typ.) V

Package Information (SOT-23-6L)

Symbol Dimensions In Millimeters (Min) Dimensions In Millimeters (Max) Dimensions In Inches (Min) Dimensions In Inches (Max)
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E 1.500 1.700 0.059 0.067
E1 2.650 2.950 0.104 0.116
e 0.950 (BSC) 0.950 (BSC) 0.037 (BSC) 0.037 (BSC)
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
0 8 0 8

Order Information

Device Package Unit/Tape
SP2038CTS SOT-23-6L 3000

2504101957_Siliup-SP2038CTS_C41355149.pdf

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