Fast Switching Speed ROHS Compliant 60V P Channel MOSFET Siliup SP60P25NK with Surface Mount Package

Key Attributes
Model Number: SP60P25NK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25A
RDS(on):
25mΩ@10V;30mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 P-Channel
Output Capacitance(Coss):
179pF
Input Capacitance(Ciss):
2.417nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
46.5nC@10V
Mfr. Part #:
SP60P25NK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP60P25NK is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% Single Pulse avalanche energy Tested and is suitable for applications such as DC-DC Converters and Motor Control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP60P25NK
  • Package: PDFN5X6-8L
  • Compliance: ROHS Compliant & Halogen-Free

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS -60 V
On-Resistance (Typical) RDS(on)TYP -10V 25 35 m
On-Resistance (Typical) RDS(on)TYP -4.5V 30 42 m
Continuous Drain Current ID -35 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) -60 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) -25 A
Continuous Drain Current ID (Tc=100C) -17 A
Pulse Drain Current IDM Tested -100 A
Single Pulsed Avalanche Energy EAS 1 210 mJ
Power Dissipation PD (Tc=25C) 50 W
Thermal Resistance Junction-to-Case RJC 2.5 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -60 - - V
Drain-Source Leakage Current IDSS VDS=-48V , VGS=0V , TJ=25 - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.7 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =-10V, ID =-5A - 25 35 m
Static Drain-Source On-Resistance RDS(ON) VGS =-4.5V, ID =-4A - 30 42 m
Input Capacitance Ciss VDS=-30V , VGS=0V , f=1MHz - 2417 - pF
Output Capacitance Coss VDS=-30V , VGS=0V , f=1MHz - 179 - pF
Reverse Transfer Capacitance Crss VDS=-30V , VGS=0V , f=1MHz - 120 - pF
Total Gate Charge Qg VDS=-30V , VGS=-10V , ID=-6A - 46.5 - nC
Gate-Source Charge Qgs VDS=-30V , VGS=-10V , ID=-6A - 9.1 - nC
Gate-Drain Charge Qg VDS=-30V , VGS=-10V , ID=-6A - 9.2 - nC
Turn-On Delay Time Td(on) VDD=-30V VGS=-10V , RG=3, ID=-6A - 9.8 - nS
Rise Time Tr VDD=-30V VGS=-10V , RG=3, ID=-6A - 6.1 - nS
Turn-Off Delay Time Td(off) VDD=-30V VGS=-10V , RG=3, ID=-6A - 44 - nS
Fall Time Tf VDD=-30V VGS=-10V , RG=3, ID=-6A - 12.7 - nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - -25 A
Reverse recover time Trr IS=-20A, di/dt=-100A/us, Tj=25 - 25 - nS
Reverse recovery charge Qrr IS=-20A, di/dt=-100A/us, Tj=25 - 55 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP60P25NK_C41355211.pdf

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