Fast Switching MOSFET Siliup SP20M65TF 650V with Low Rdson and Single Pulse Avalanche Energy Testing

Name: Fast Switching MOSFET Siliup SP20M65TF 650V with Low Rdson and Single Pulse Avalanche Energy Testing
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SP20M65TF
Availability: InStock

Key Attributes

Model Number: SP20M65TF

Product Custom Attributes

Drain To Source Voltage:

650V

Current - Continuous Drain(Id):

20A

Operating Temperature -:

-55℃~+150℃

RDS(on):

175mΩ@10V

Gate Threshold Voltage (Vgs(th)):

3V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

2.5pF

Number:

1 N-channel

Output Capacitance(Coss):

102pF

Pd - Power Dissipation:

34W

Input Capacitance(Ciss):

1.745nF

Gate Charge(Qg):

45.5nC@10V

Mfr. Part #:

SP20M65TF

Package:

TO-247

Product Description

Product Overview

The SP20M65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low Rdson, with 100% single pulse avalanche energy testing. This MOSFET is ideal for PWM applications, hard-switched and high-frequency circuits, and power management systems.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 20M65
Package: TO-247

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Breakdown Voltage	V(BR)DSS				650	V
On-Resistance	RDS(on)TYP	@10V		175		m
Continuous Drain Current	ID				20	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				650	V
Gate-Source Voltage	VGS				30	V
Continuous Drain Current (Tc=25)	ID				20	A
Continuous Drain Current (Tc=100)	ID				12.5	A
Pulsed Drain Current	IDM				80	A
Single Pulse Avalanche Energy	EAS				485	mJ
Power Dissipation (Tc=25)	PD				34	W
Thermal Resistance Junction-to-Case	RJC				3.68	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	650	-	-	V
Drain-Source Leakage Current	IDSS	VDS = 520V, VGS = 0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS = 30V, VDS = 0V	-	-	0.1	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2	3	4	V
Static Drain-Source On-Resistance	RDS(ON)	VGS = 10V, ID = 10A	-	175	205	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	-	1745	-	pF
Output Capacitance	Coss		-	102	-
Reverse Transfer Capacitance	Crss		-	2.5	-
Total Gate Charge	Qg	VDS=400V , VGS=0-10V , ID=10A	-	45.5	-	nC
Gate-Source Charge	Qgs		-	10.5	-
Gate-Drain Charge	Qgd		-	9	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=400V, VGS=10V , RG=2, ID=10A	-	31	-	nS
Rise Time	Tr		-	20	-
Turn-Off Delay Time	Td(off)		-	83	-
Fall Time	Tf		-	9	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	20	A
Reverse recover time	Trr	IS=10A, di/dt=100A/us, Tj=25	-	475	-	nS
Reverse recovery charge	Qrr		-	5.8	-	uC

Package Information

Package: TO-247

Pin Configuration: 1:G, 2:D, 3:S

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.850	5.150	0.191	0.200
A1	2.200	2.600	0.087	0.102
b2	1.800	2.200	0.071	0.087
b	1.000	1.400	0.039	0.055
b1	2.800	3.200	0.110	0.126
c	0.500	0.700	0.020	0.028
c1	1.900	2.100	0.075	0.083
D	15.450	15.750	0.608	0.620
E1	3.500	REF.	0.138	REF.
E2	3.600	REF.	0.142	REF.
L	40.900	41.300	1.610	1.626
L1	24.800	25.100	0.976	0.988
L2	20.300	20.600	0.799	0.811
	7.100	7.300	0.280	0.287
e	5.450	TYP.	0.215	TYP.
H1	5.980	REF.	0.235	REF.
h	0.000	0.300	0.000	0.012

Order Information

Device	Package	Unit/Tube
SP20M65TF	TO-247	30

Marking

Device Code: 20M65

Suffix: TF

Additional Marking: *: Week Code

2504101957_Siliup-SP20M65TF_C22466836.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.