Power Management Solution Siliup SP010N02BGHTO 100V N Channel MOSFET with Split Gate Trench Technology
Key Attributes
Model Number:
SP010N02BGHTO
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
260A
RDS(on):
1.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.2V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
280W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
SP010N02BGHTO
Package:
TOLL
Product Description
Product Overview
The SP010N02BGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low Rdson, making it ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management solutions. It is tested for 100% single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N02BGHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) | @10V | 1.8 | m | |||
| ID | 260 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current1 | ID | (Tc=25) | 260 | A | ||
| Continuous Drain Current1 | ID | (Tc=100) | 175 | A | ||
| Pulsed Drain Current | IDM | 1040 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1560 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 280 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.45 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | 110 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.7 | 3.2 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 1.8 | 2.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 50V, VGS = 0V, f = 1.0MHz | - | 9625 | - | pF |
| Output Capacitance | Coss | - | 1608 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 75 | - | pF | |
| Total Gate Charge | Qg | VDS = 50V, VGS = 10V, ID=20A | - | 160 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | ||
| Gate-Drain Charge | Qg | - | 37 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, RL = 2.5 RG = 6.0 | - | 35 | - | nS |
| Rise Time | tr | - | 68 | - | ||
| Turn-Off Delay Time | td(off) | - | 150 | - | ||
| Fall Time | tf | - | 105 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V,TJ = 25C | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 260 | A | |
| Reverse Recovery Time | Trr | TJ = 25C, IF = 100A, di/dt = 100A/us | - | 97 | - | nS |
| Reverse Recovery Charge | Qrr | - | 228 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | |||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
2506271720_Siliup-SP010N02BGHTO_C49258031.pdf
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