High gain low noise NPN transistor Slkor 2SC4901 suitable for compact PCB assembly and RF amplification

Name: High gain low noise NPN transistor Slkor 2SC4901 suitable for compact PCB assembly and RF amplification
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SC4901
Availability: InStock

Key Attributes

Model Number: 2SC4901

Product Custom Attributes

Emitter-Base Voltage(Vebo):

1.5V

Current - Collector Cutoff:

100nA

DC Current Gain:

250@20mA,5V

Transition Frequency(fT):

9GHz

Vce Saturation(VCE(sat)):

Type:

NPN

Pd - Power Dissipation:

100mW

Current - Collector(Ic):

50mA

Collector - Emitter Voltage VCEO:

Operating Temperature:

Mfr. Part #:

2SC4901

Package:

SOT-323

Product Description

Product Overview

The 2SC4901 is an ultra-high frequency (UHF) low-noise transistor designed using a planar NPN silicon epitaxial bipolar process. It offers high power gain, excellent low-noise characteristics, and a wide dynamic range. Packaged in a SOT-323 surface-mount package, it is suitable for high-density PCB assembly and is primarily used in VHF, UHF, and CATV high-frequency low-noise broadband amplifiers.

Product Attributes

Type: NPN Silicon Epitaxial Bipolar Transistor
Packaging: SOT-323
Brand: (Implied from URL: slkormicro.com)

Technical Specifications

Key Features

Parameter	Symbol	Typical Value	Unit	Test Conditions
High Gain	\|S21e\|	13.5	dB	VCE=5V, IC=20mA, f=0.9GHz
Low Noise	NF	1.6	dB	VCE=5V, IC=5mA, f=0.9GHz
Gain Bandwidth Product	fT	9	GHz	VCE=5V, IC=20mA, f=0.9GHz

Absolute Maximum Ratings (TA=25)

Parameter	Symbol	Rating	Unit
Collector-Base Breakdown Voltage	VCBO	15	V
Collector-Emitter Breakdown Voltage	VCEO	9	V
Emitter-Base Breakdown Voltage	VEBO	1.5	V
Collector Current	IC	50	mA
Power Dissipation	PC	100	mW
Junction Temperature	Tj	150
Storage Temperature	Tstg	-65 ~ +150

Electrical Characteristics (TA=25)

Parameter	Symbol	Min	Typical	Max	Unit	Test Conditions
Collector-Base Breakdown Voltage	VCBO	15	-	-	V	IC=1.0A
Collector-Base Leakage Current	ICBO	-	0.1	-	A	VCB=10V
Emitter-Base Leakage Current	IEBO	-	0.1	-	A	VEB=1V
DC Current Gain	hFE	90	-	250	-	VCE=5V, IC=20mA
Gain Bandwidth Product	fT	7	9	-	GHz	VCE=5V, IC=20mA, f=0.9GHz
Output Feedback Capacitance	Cre	-	0.65	1.0	pF	VCB=10V, IE=0mA, f=1MHz
Insertion Power Gain	\|S21e\|	13.3	-	-	dB	VCE=5V, IC=5mA, f=0.9GHz
Insertion Power Gain	\|S21e\|	-	13.5	-	dB	VCE=5V, IC=20mA, f=0.9GHz
Noise Factor	NF	-	1.6	2.5	dB	VCE=5V, IC=5mA, f=0.9GHz

Pin Definition

Pin	Function
1	Base
2	Emitter
3	Collector

SOT-323 Package Dimensions

Symbol	Min (mm)	Max (mm)
A	0.200	0.400
B	1.150	1.350
C	2.150	2.450
D	0.650	-
G	1.200	1.400
H	2.000	2.200
K	0.900	1.100
L	0.525	-
M	0.080	0.150

Scattering Parameters (S-PARAMETER) (VCE=5V, IC=20mA, ZO=50)

Frequency (GHz)	S11		S21		S12		S22
Frequency (GHz)	MAG	ANG	MAG	ANG	MAG	ANG	MAG	ANG
0.1	0.482	-79.853	25.430	135.31	0.020	63.866	0.786	-21.025
0.2	0.450	-120.84	16.776	117.16	0.026	64.66	0.614	-40.075
0.3	0.419	-146.54	12.511	106.35	0.033	67.181	0.513	-45.357
0.4	0.410	-163.95	10.054	99.859	0.040	64.4	0.467	-48.73
0.5	0.402	-178.26	8.186	95.673	0.046	66.285	0.452	-54.326
0.6	0.400	170.03	6.831	90.637	0.051	68.126	0.440	-59.156
0.7	0.395	159.69	5.944	86.449	0.061	68.343	0.434	-64.801
0.8	0.399	150.44	5.183	82.109	0.064	71.459	0.427	-70.457
0.9	0.397	142.48	4.741	77.456	0.077	73.043	0.433	-76.914
1.0	0.394	134.17	4.330	75.451	0.081	74.011	0.431	-81.942
1.1	0.394	126.01	3.904	73.331	0.090	78.88	0.434	-87.979
1.2	0.393	118.88	3.460	70.505	0.093	82.093	0.433	-92.392
1.3	0.395	111.24	3.131	65.779	0.100	79.846	0.439	-99.814
1.4	0.388	104.27	2.895	63.501	0.115	80.355	0.438	-105.56
1.5	0.385	98.31	2.701	59.745	0.126	84.651	0.444	-111.63
1.6	0.387	90.492	2.567	58.722	0.131	85.665	0.442	-117.48
1.7	0.389	84.07	2.263	60.445	0.144	86.137	0.443	-123.71
1.8	0.393	77.013	2.041	57.306	0.156	83.966	0.456	-129.5
1.9	0.392	71.616	1.902	55.569	0.176	83.702	0.455	-134.9
2.0	0.396	65.487	1.777	53.999	0.192	85.078	0.466	-140.24
2.1	0.391	57.703	1.746	54.863	0.196	83.86	0.459	-145.73

2009141834_Slkor-2SC4901_C781326.pdf

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