30V complementary MOSFET Siliup SP3013CNJ PDFN3X3 8L package tested for single pulse avalanche energy

Key Attributes
Model Number: SP3013CNJ
Product Custom Attributes
Drain To Source Voltage:
30V;30V
Current - Continuous Drain(Id):
16A;8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA;1.6V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF;112pF
Number:
-
Input Capacitance(Ciss):
940pF;850pF
Output Capacitance(Coss):
131pF;116pF
Pd - Power Dissipation:
14W
Gate Charge(Qg):
9.6nC@4.5V;13nC@10V
Mfr. Part #:
SP3013CNJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP3013CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient switching applications. It features a fast switching speed and is available in a surface mount PDFN3X3-8L package. This MOSFET is ROHS Compliant & Halogen-Free and undergoes 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP3013CNJ
  • Package Type: PDFN3X3-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Rating P-Channel Conditions P-Channel Rating Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS 20 20 V
Continuous Drain Current (Tc=25C) ID 16 -8 A
Pulse Drain Current IDM 64 -32 A
Single pulsed avalanche energy EAS 42 (VDD=15V, VGS =10V,L = 0.1mH, Rg=25) 36 (VDD=-15V,VGS =-10V,L = 0.5mH, Rg=25) mJ
Power Dissipation (Tc=25C) PD 14 W
Thermal Resistance Junction-to-Case RJC 8.9 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 1 VDS=-24V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 - 2.2 VGS=VDS , ID =-250uA -1.0 - -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 8A 11 - 15 VGS =-10V, ID =-6.5A 28 - 42 m
Static Drain-Source On-Resistance RDS(ON) VGS = 4.5V, ID = 6A 15 - 28 VGS =-4.5V, ID =-5A 38 - 55 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 940 VDS=-15V , VGS=0V , f=1MHz 850 pF
Output Capacitance Coss 131 116 pF
Reverse Transfer Capacitance Crss 109 112 pF
Total Gate Charge Qg VDS=15V , VGS=4.5V , ID=8A 9.6 VDS=-15V , VGS=-10V , ID=-6.5A 13 nC
Gate-Source Charge Qgs 3.9 2.6 nC
Gate-Drain Charge Qg d 3.4 2.2 nC
Turn-On Delay Time Td(on) VDD=15V VGS=10V , RG=3, ID=8A 4.2 VDD=-15V VGS=-10V , RG=3, ID=-4A 7.5 nS
Rise Time Tr 8.2 5.5 nS
Turn-Off Delay Time Td(off) 31 19 nS
Fall Time Tf 4 7 nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 VGS=0V , IS=-1A , TJ=25 -1.2 V
Maximum Body-Diode Continuous Current IS 16 -8 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 1.2 IS=-20A, di/dt=-100A/us, Tj=25 0.9 nS
Reverse recovery charge Qrr 9 7 nC
Package Information (PDFN3X3-8L) Dimensions In Millimeters Dimensions In Inches
Symbol Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0 0.05 0 0.002
D 2.900 3.100 0.114 0.122
D1 0.935 1.135 0.037 0.045
D2 0.280 0.480 0.011 0.019
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0 0.100 0 0.004
L3 0 0.100 0 0.004
H 0.315 0.515 0.012 0.020
9 13 9 13

2504101957_Siliup-SP3013CNJ_C22385433.pdf

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