30V complementary MOSFET Siliup SP3013CNJ PDFN3X3 8L package tested for single pulse avalanche energy
Product Overview
The SP3013CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient switching applications. It features a fast switching speed and is available in a surface mount PDFN3X3-8L package. This MOSFET is ROHS Compliant & Halogen-Free and undergoes 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP3013CNJ
- Package Type: PDFN3X3-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Rating | P-Channel Conditions | P-Channel Rating | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | 16 | -8 | A | ||
| Pulse Drain Current | IDM | 64 | -32 | A | ||
| Single pulsed avalanche energy | EAS | 42 (VDD=15V, VGS =10V,L = 0.1mH, Rg=25) | 36 (VDD=-15V,VGS =-10V,L = 0.5mH, Rg=25) | mJ | ||
| Power Dissipation (Tc=25C) | PD | 14 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 8.9 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | VGS=0V , ID=-250uA | -30 | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | 1 | VDS=-24V , VGS=0V , TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | VGS=20V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.2 | VGS=VDS , ID =-250uA | -1.0 - -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 8A | 11 - 15 | VGS =-10V, ID =-6.5A | 28 - 42 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V, ID = 6A | 15 - 28 | VGS =-4.5V, ID =-5A | 38 - 55 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 940 | VDS=-15V , VGS=0V , f=1MHz | 850 | pF |
| Output Capacitance | Coss | 131 | 116 | pF | ||
| Reverse Transfer Capacitance | Crss | 109 | 112 | pF | ||
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | 9.6 | VDS=-15V , VGS=-10V , ID=-6.5A | 13 | nC |
| Gate-Source Charge | Qgs | 3.9 | 2.6 | nC | ||
| Gate-Drain Charge | Qg d | 3.4 | 2.2 | nC | ||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=3, ID=8A | 4.2 | VDD=-15V VGS=-10V , RG=3, ID=-4A | 7.5 | nS |
| Rise Time | Tr | 8.2 | 5.5 | nS | ||
| Turn-Off Delay Time | Td(off) | 31 | 19 | nS | ||
| Fall Time | Tf | 4 | 7 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 16 | -8 | A | ||
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | 1.2 | IS=-20A, di/dt=-100A/us, Tj=25 | 0.9 | nS |
| Reverse recovery charge | Qrr | 9 | 7 | nC | ||
| Package Information (PDFN3X3-8L) | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Symbol | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0 | 0.05 | 0 | 0.002 |
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 0.935 | 1.135 | 0.037 | 0.045 |
| D2 | 0.280 | 0.480 | 0.011 | 0.019 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0 | 0.100 | 0 | 0.004 |
| L3 | 0 | 0.100 | 0 | 0.004 |
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
2504101957_Siliup-SP3013CNJ_C22385433.pdf
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