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quality Durable PNP Switching Transistor Slkor MMBT3906 Featuring SOT23 Package and High Breakdown Voltage factory
quality Durable PNP Switching Transistor Slkor MMBT3906 Featuring SOT23 Package and High Breakdown Voltage factory

Durable PNP Switching Transistor Slkor MMBT3906 Featuring SOT23 Package and High Breakdown Voltage

Key Attributes
Model Number: MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Transition Frequency(fT):
300MHz
Number:
1 PNP
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description

Product Overview

The MMBT3906 is a PNP switching transistor designed for general-purpose applications. It offers a continuous collector current of -200 mAdc and features breakdown voltages of -40 Vdc for both Collector-Emitter and Collector-Base. This transistor is suitable for switching applications and is available in a SOT-23 package.

Product Attributes

  • Brand: SLKORMICRO
  • Model: MMBT3906
  • Type: PNP Switching Transistor
  • Package: SOT-23

Technical Specifications

Characteristic Symbol Rating Unit Notes
Collector-Emitter Voltage VCEO -40 Vdc Maximum Rating
Collector-Base Voltage VCBO -40 Vdc Maximum Rating
Emitter-Base Voltage VEBO -6.0 Vdc Maximum Rating
Collector Current-Continuous Ic -200 mAdc Maximum Rating
Total Device Dissipation (FR-5 Board) PD 225 mW @ TA=25, Derate above 25: 1.8 mW/
Total Device Dissipation (Alumina Substrate) PD 300 mW @ TA=25, Derate above 25: 2.4 mW/
Thermal Resistance Junction to Ambient RJA 417 /W
Junction and Storage Temperature TJ, Tstg 150, -55 to +150
Collector-Emitter Breakdown Voltage V(BR)CEO -40 Vdc @ Ic=-1.0mAdc, IB=0
Collector-Base Breakdown Voltage V(BR)CBO -40 Vdc @ Ic=-10Adc, IE=0
Emitter-Base Breakdown Voltage V(BR)EBO -6.0 Vdc @ IE=-10Adc, Ic=0
Base Cutoff Current IBEX -50 nAdc @ VCE=-30Vdc, VEB =-3.0 Vdc
Collector Cutoff Current ICEX -50 nAdc @ VCE=-30Vdc, VEB =-3.0Vdc
DC Current Gain (hFE) hFE 40-300 @ Ic=-0.1mAdc to -100mAdc, VCE=-1.0Vdc (range varies by Ic)
Collector-Emitter Saturation Voltage VCE(sat) -0.25 to -0.4 Vdc @ Ic=-10mAdc, IB=-1.0mAdc to Ic=-50mAdc, IB=-5.0mAdc
Base-Emitter Saturation Voltage VBE(sat) -0.65 to -0.95 Vdc @ Ic=-10mAdc, IB=-1.0mAdc to Ic=-50mAdc, IB=-5.0mAdc
Current-Gain-Bandwidth Product fT 300 MHz @ Ic=-10mAdc, VCE=-20Vdc, f=100MHz
Output Capacitance Cobo 4.0 pF @ VCB=-5.0Vdc, IE=0, f=1.0MHz
Input Capacitance Cibo 8.0 pF @ VEB=-0.5Vdc, IC=0, f=1.0MHz
Input Impedance hie 1.0-10 k @ VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz
Voltage Feedback Ratio hre 0.5-8.010-4 @ VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz
Small-Signal Current Gain hfe 100-400 @ VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz
Output Admittance hoe 1.0-40 mhos @ VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz
Noise Figure NF 5.0 dB @ VCE=-5.0Vdc, IC=-100Adc, Rs=1.0 k, f=1.0KHz
Delay Time td 35 ns @ VCC=-3.0Vdc, VBE=-0.5Vdc, IC=-10mAdc, IB1=-1.0mAdc
Rise Time tr 35 ns @ VCC=-3.0Vdc, IC=-10mAdc, IB1=-1.0mAdc
Storage Time ts 225 ns @ VCC=-3.0Vdc, IC=-10mAdc, IB1=IB2=-1.0mAdc
Fall Time tf 75 ns @ VCC=-3.0Vdc, IC=-10mAdc, IB1=IB2=-1.0mAdc
Symbol MIN. MAX. Unit
A 0.900 1.150 mm
A1 0.000 0.100 mm
A2 0.900 1.050 mm
b 0.300 0.500 mm
c 0.080 0.150 mm
D 2.800 3.000 mm
E 1.200 1.400 mm
E1 2.250 2.550 mm
e 0.950 TYP mm
e1 1.800 2.000 mm
L 0.550 REF
L1 0.300 0.500 mm
0 8

2409302302_Slkor-MMBT3906_C3041295.pdf

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