Dual N Channel MOSFET Siliup SP8205DTS 20V 5A Drain Current SOT23 6L Package Silicon Semiconductor
Key Attributes
Model Number:
SP8205DTS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
18mΩ@4.5V;24mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
2 N-Channel
Output Capacitance(Coss):
87pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
415pF
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
SP8205DTS
Package:
SOT-23-6L
Product Description
Product Overview
The SP8205DTS is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP8205DTS
- Device Code: 8205
- Channel Type: Dual N-Channel
- Package: SOT-23-6L
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 5 | A | |||
| Pulse Drain Current | IDM | Tested | 20 | A | ||
| Power Dissipation | PD | (Ta=25) | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | 83.3 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.5 | 0.7 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =4.5A | 18 | 27 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID =3.5A | 24 | 32 | m | |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | 415 | pF | ||
| Output Capacitance | Coss | 87 | pF | |||
| Reverse Transfer Capacitance | Crss | 70 | pF | |||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=4A | 6.5 | nC | ||
| Gate-Source Charge | Qgs | 1.2 | ||||
| Gate-Drain Charge | Qg d | 1.5 | ||||
| Turn-On Delay Time | td(on) | VDD=10V , VGS=4.5V , RG=3 , ID=1A | 4.5 | nS | ||
| Turn-On Rise Time | tr | 80 | ||||
| Turn-Off Delay Time | td(off) | 25 | ||||
| Turn-Off Fall Time | tf | 23 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
Package Information (SOT-23-6L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 1.050 | 1.250 | 0.041 | 0.049 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 1.050 | 1.150 | 0.041 | 0.045 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.100 | 0.200 | 0.004 | 0.008 |
| D | 2.820 | 3.020 | 0.111 | 0.119 |
| E | 1.500 | 1.700 | 0.059 | 0.067 |
| E1 | 2.650 | 2.950 | 0.104 | 0.116 |
| e | 0.950(BSC) | 0.037(BSC) | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.300 | 0.600 | 0.012 | 0.024 |
| 0 | 8 | 0 | 8 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP8205DTS | SOT-23-6L | 3000 |
2504101957_Siliup-SP8205DTS_C41354830.pdf
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