SOT-23-3L Package 100V N-Channel MOSFET Siliup SP010N70T1 for Battery Switch and Converter Circuits
Key Attributes
Model Number:
SP010N70T1
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4.5A
RDS(on):
70mΩ@10V;85mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
900pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
SP010N70T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP010N70T1 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-23-3L
- Device Code: 010N70
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) | @10V | 70 | m | |||
| RDS(on) | @4.5V | 85 | m | |||
| Continuous Drain Current | ID | 4.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 4.5 | A | |||
| Pulse Drain Current | IDM | Tested | 18 | A | ||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=60V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=2A | - | 70 | 100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=1A | - | 85 | 120 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 900 | - | pF |
| Output Capacitance | Coss | - | 35 | - | ||
| Reverse Transfer Capacitance | Crss | - | 30 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=5A | - | 22 | - | nC |
| Gate-Source Charge | Qgs | - | 2.9 | - | ||
| Gate-Drain Charge | Qg d | - | 5.4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V VGS=10V , RG=3, ID=5A | - | 3.9 | - | nS |
| Turn-On Rise Time | tr | - | 26 | - | ||
| Turn-Off Delay Time | td(off) | - | 16.2 | - | ||
| Turn-Off Fall Time | tf | - | 8.9 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | |||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 (Typ.) | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP010N70T1_C41354891.pdf
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