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quality Compact PNP Transistor Slkor MMST5401 Medium Power Amplification and Switching SOT323 Package Device factory
quality Compact PNP Transistor Slkor MMST5401 Medium Power Amplification and Switching SOT323 Package Device factory

Compact PNP Transistor Slkor MMST5401 Medium Power Amplification and Switching SOT323 Package Device

Key Attributes
Model Number: MMST5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
DC Current Gain:
300@10mA,5V
Transition Frequency(fT):
100MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
500mV@50mA,5mA
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMST5401
Package:
SOT-323
Product Description

Product Overview

The MMST5401 is a PNP transistor designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for compact electronic designs. This transistor is complementary to the MMST5551.

Product Attributes

  • Brand: SLKORMicro
  • Model: MMST5401
  • Type: PNP Transistor
  • Package: SOT-323

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO -160 V
Collector - Emitter Voltage VCEO -150 V
Emitter - Base Voltage VEBO -5 V
Collector Current - Continuous IC -600 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction To Ambient RJA 625 /W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 to 150
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage VCBO -160 V Ic= -100 A IE= 0
Collector-emitter breakdown voltage VCEO -150 V Ic= -1 mA IB= 0
Emitter-base breakdown voltage VEBO -5 V IE= -100A IC= 0
Collector-base cut-off current ICBO -50 nA VCB= -120 V , IE= 0
Emitter cut-off current IEBO -50 nA VEB= -3V , IC=0
Collector-emitter saturation voltage VCE(sat) -0.2 V IC= -10 mA, IB=-1mA
-0.5 V IC= -50 mA, IB= -5mA
Base - emitter saturation voltage VBE(sat) -1 V IC=- 10 mA, IB=-1mA
-1 V IC= -50 mA, IB= -5mA
DC current gain hFE 50 VCE= -5V, IC= -1mA
60 300 VCE= -5V, IC= -10mA
50 VCE= -5V, IC=- 50mA
Collector output capacitance Cob 6 pF VCB= -10V, IE= 0,f=1MHz
Transition frequency fT 100 MHz VCE= -10V, IC= -10mA,f=100MHz
Marking
K4M (1.Base, 2.Emitter, 3.Collector)
Dimensions (SOT-323)
A 2.2 mm max
B 2.0 mm max
A1 0.25 mm max
c 0.2 mm max
D 1.3 mm max
E 1.1 mm max
e 0.65 mm typ
e1 0.1 mm max
HE 1.15 mm max
Lp 0.45 mm max
Q 0.15 mm max
v 0.2 mm max
w 0.1 mm max

2309281726_Slkor-MMST5401_C18208596.pdf

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