Surface Mount P Channel MOSFET Siliup SP20P18T1 20V Device Ideal for Power Management Applications
Key Attributes
Model Number:
SP20P18T1
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V;28mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF
Number:
1 P-Channel
Output Capacitance(Coss):
191pF
Input Capacitance(Ciss):
1.258nF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
32nC@4.5V
Mfr. Part #:
SP20P18T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP20P18T1 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It features a low on-resistance and robust thermal characteristics.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20P18T1
- Device Code: 20P18
- Package: SOT-23-3L
- Technology: P-Channel MOSFET
- Version: Ver-1.3
- Website: www.siliup.com
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @ -4.5V | 18 | m | |||
| RDS(on) | @ -2.5V | 28 | m | |||
| Continuous Drain Current | ID | -7 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 10 | V | |||
| Continuous Drain Current | ID | -7 | A | |||
| Pulse Drain Current | IDM | Tested | -28 | A | ||
| Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 96 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.7 | -1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-5A | 18 | 26 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-4A | 28 | 36 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 1258 | pF | ||
| Output Capacitance | Coss | 191 | pF | |||
| Reverse Transfer Capacitance | Crss | 151 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-5A | 32 | nC | ||
| Gate-Source Charge | Qgs | 3.6 | nC | |||
| Gate-Drain Charge | Qgd | 10 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=10, ID=-5A, | 9 | nS | ||
| Turn-On Rise Time | tr | 35 | nS | |||
| Turn-Off Delay Time | td(off) | 30 | nS | |||
| Turn-Off Fall Time | tf | 11 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23-3L) | ||||||
| Dimension | Symbol | Unit | Min. | Typ. | Max. | |
| A | A | mm | 1.050 | 1.250 | ||
| A1 | A1 | mm | 0.000 | 0.100 | ||
| A2 | A2 | mm | 1.050 | 1.150 | ||
| b | b | mm | 0.300 | 0.500 | ||
| c | c | mm | 0.100 | 0.200 | ||
| D | D | mm | 2.820 | 3.020 | ||
| E | E | mm | 1.500 | 1.700 | ||
| E1 | E1 | mm | 2.650 | 2.950 | ||
| e | e | mm | 0.950 | |||
| e1 | e1 | mm | 1.800 | 2.000 | ||
| L | L | mm | 0.300 | 0.600 | ||
| 0 | 8 | |||||
2504101957_Siliup-SP20P18T1_C41354948.pdf
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