N Channel MOSFET Siliup SP30N27DTS 30 Volt Device Suitable for Power Switching and Battery Circuits
Key Attributes
Model Number:
SP30N27DTS
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@10V;30mΩ@4.5V;40mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
-
Output Capacitance(Coss):
68pF
Pd - Power Dissipation:
1.15W
Input Capacitance(Ciss):
745pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
SP30N27DTS
Package:
SOT-23-6L
Product Description
Product Overview
The SP30N27DTS is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N27DTS
- Technology: N-Channel MOSFET
- Package: SOT-23-6L
- Marking Code: 30N27D
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | @10V | 27 | m | |||
| @4.5V | 30 | m | ||||
| @2.5V | 40 | m | ||||
| Continuous Drain Current | ID | 5.8 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Pulse Drain Current | IDM | Tested | 23.2 | A | ||
| Power Dissipation | PD | 1.15 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 108 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1.0 | 1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =5.8A | - | 27 | 35 | m |
| VGS=4.5V , ID =5A | - | 30 | 40 | m | ||
| VGS=2.5V , ID =4A | - | 40 | 50 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 745 | - | pF |
| Output Capacitance | Coss | - | 68 | - | ||
| Reverse Transfer Capacitance | Crss | - | 53 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=3A | - | 18 | - | nC |
| Gate-Source Charge | Qgs | - | 3 | - | ||
| Gate-Drain Charge | Qg | - | 2.2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=3 , ID=3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 11 | - | ||
| Turn-Off Delay Time | td(off) | - | 25 | - | ||
| Turn-Off Fall Time | tf | - | 3 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP30N27DTS | SOT-23-6L | 3000 | ||||
| Package Information (SOT-23-6L) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| Dimensions In Inches | Min | Max | ||||
| A | 1.050 | 1.250 | 0.041 | 0.049 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 1.050 | 1.150 | 0.041 | 0.045 | ||
| b | 0.300 | 0.500 | 0.012 | 0.020 | ||
| c | 0.100 | 0.200 | 0.004 | 0.008 | ||
| D | 2.820 | 3.020 | 0.111 | 0.119 | ||
| E | 1.500 | 1.700 | 0.059 | 0.067 | ||
| E1 | 2.650 | 2.950 | 0.104 | 0.116 | ||
| e | (BSC) | 0.950 | 0.037 | |||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 | ||
| L | 0.300 | 0.600 | 0.012 | 0.024 | ||
| 0 | 8 | 0 | 8 | |||
2504101957_Siliup-SP30N27DTS_C41354826.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
