20V N Channel MOSFET Siliup SP2102T3 2.1A Continuous Drain Current for Surface Mount Power Solutions
Key Attributes
Model Number:
SP2102T3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V;60mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
54pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
335pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
4.1nC@4.5V
Mfr. Part #:
SP2102T3
Package:
SOT-323
Product Description
Product Overview
The SP2102T3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this MOSFET is suitable for surface mount applications. Key applications include battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-323
- Device Code: TS2
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| RDS(on) | RDS(on)TYP | 4.5V | 40 | 60 | m | |
| 2.5V | 60 | 90 | m | |||
| Continuous Drain Current | ID | 2.1 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 10 | V | |||
| Continuous Drain Current | ID | 2.1 | A | |||
| Pulse Drain Current | IDM | Tested | 8.4 | A | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.5 | 0.7 | 1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=3.6A | - | 40 | 60 | m |
| VGS=2.5V , ID=3.1A | - | 60 | 90 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 335 | - | pF |
| Output Capacitance | Coss | - | 65 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 54 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=3.6A | - | 4.1 | - | nC |
| Gate-Source Charge | Qgs | - | 0.62 | - | ||
| Gate-Drain Charge | Qg d | - | 1.4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6 , ID=3.6A | - | 8 | - | nS |
| Turn-On Rise Time | tr | - | 57 | - | ||
| Turn-Off Delay Time | td(off) | - | 15 | - | ||
| Turn-Off Fall Time | tf | - | 9 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-323 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.100 | 0.035 - 0.043 | ||||
| A1 | 0.000 - 0.100 | 0.000 - 0.004 | ||||
| A2 | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| c | 0.080 - 0.150 | 0.003 - 0.006 | ||||
| D | 2.000 - 2.200 | 0.079 - 0.087 | ||||
| E | 1.150 - 1.350 | 0.045 - 0.053 | ||||
| E1 | 2.000 - 2.450 | 0.085 - 0.096 | ||||
| e | 0.650 TYP. | 0.026 TYP. | ||||
| e1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| L | 0.525 REF. | 0.021 REF. | ||||
| L1 | 0.260 - 0.460 | 0.010 - 0.018 | ||||
| 0 - 8 | 0 - 8 | |||||
2504101957_Siliup-SP2102T3_C41354904.pdf
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