Siliup BSS84KNC 60V P Channel MOSFET Featuring 2KV ESD Protection for Battery Switch and DC DC Converter
Key Attributes
Model Number:
BSS84KNC
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130mA
RDS(on):
4.2Ω@10V;4.5Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.8nC@10V
Mfr. Part #:
BSS84KNC
Package:
PDFN1006-3
Product Description
Product Overview
The BSS84KNC is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device offers ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package Type: DFN1006-3L
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @ -10V | 4.2 | 6 | ||
| Static Drain-Source On-Resistance | RDS(on) | @ -4.5V | 4.5 | 7 | ||
| Continuous Drain Current | ID | -130 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -130 | mA | |||
| Pulse Drain Current | IDM | Tested | -520 | mA | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.8 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-150mA | 4.2 | 6 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-150mA | 4.5 | 7 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-5V , VGS=0V , f=1MHz | 30 | pF | ||
| Output Capacitance | Coss | 10 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-0.15A | 1.8 | nC | ||
| Gate-Source Charge | Qgs | 0.5 | nC | |||
| Gate-Drain Charge | Qgd | 0.18 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=50, ID=-0.15A | 8.6 | nS | ||
| Turn-On Rise Time | tr | 20 | nS | |||
| Turn-Off Delay Time | td(off) | 14 | nS | |||
| Turn-Off Fall Time | tf | 77 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information: DFN1006-3L | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | |||
| A | 0.46 | 0.51 | ||||
| A1 | 0 | 0.05 | ||||
| b | 0.45 | 0.55 | ||||
| b1 | 0.1 | 0.2 | ||||
| c | 0.08 | 0.18 | ||||
| D | 0.95 | 1.05 | ||||
| D1 | 0.65 | |||||
| E | 0.55 | 0.65 | ||||
| E1 | 0.325 | |||||
| L | 0.2 | 0.3 | ||||
| L1 | 0.2 | 0.3 | ||||
2504101957_Siliup-BSS84KNC_C41355123.pdf
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