60V N Channel MOSFET Siliup 2N7002W with 300mA Drain Current SOT 323 Surface Mount Package
Key Attributes
Model Number:
2N7002W
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
28pF
Gate Charge(Qg):
1.7nC@4.5V
Mfr. Part #:
2N7002W
Package:
SOT-323
Product Description
Product Overview
The 2N7002W is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this MOSFET offers high power and current handling capabilities. It is suitable for use in battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-323
- Marking Code: K72
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 1.7 | 3 | ||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 1.8 | 4 | ||
| Continuous Drain Current | ID | 300 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Pulse Drain Current | IDM | Tested | 1200 | mA | ||
| Power Dissipation | PD | 300 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 416 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 5 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 1.7 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 28 | - | pF |
| Output Capacitance | Coss | - | 10 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=300mA | - | 1.7 | - | nC |
| Gate-Source Charge | Qgs | - | 0.35 | - | ||
| Gate-Drain Charge | Qg d | - | 0.5 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=25 , ID=300mA | - | 3 | - | nS |
| Turn-On Rise Time | tr | - | 17 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-323) | ||||||
| Dimension | Symbol | Min. | Max. | Typ. | Unit | |
| A | A | 0.90 | 1.15 | mm | ||
| A1 | A1 | 0.00 | 0.10 | mm | ||
| A2 | A2 | 0.90 | 1.00 | mm | ||
| b | b | 0.30 | 0.50 | mm | ||
| c | c | 0.10 | 0.15 | mm | ||
| D | D | 2.00 | 2.20 | mm | ||
| E | E | 1.15 | 1.35 | mm | ||
| E1 | E1 | 2.15 | 2.40 | mm | ||
| e | e | 0.65 | Typ. | |||
| e1 | e1 | 1.20 | 1.40 | mm | ||
| L | L | 0.525 | Ref. | |||
| L1 | L1 | 0.26 | 0.46 | mm | ||
2504101957_Siliup-2N7002W_C41349570.pdf
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