High Reliability PNP Silicon Epitaxial Transistor Slkor BC860B SOT-23 Package for Circuit Switching
Key Attributes
Model Number:
BC860B
Product Custom Attributes
Mfr. Part #:
BC860B
Package:
SOT-23
Product Description
Product Overview
The BC856-BC860 series is a PNP Silicon Epitaxial Transistor designed for switching and amplifier applications. Packaged in a SOT-23 plastic package, these transistors offer reliable performance for various electronic circuits.
Product Attributes
- Package Type: SOT-23 Plastic Package
- Transistor Type: PNP Silicon Epitaxial Transistor
Technical Specifications
Absolute Maximum Ratings (Ta = 25 C)
| Parameter | Symbol | BC856 | BC857, BC860 | BC858, BC859 | Unit |
|---|---|---|---|---|---|
| Collector Base Voltage | -VCBO | 80 | 50 | 30 | V |
| Collector Emitter Voltage | -VCEO | 65 | 45 | 30 | V |
| Emitter Base Voltage | -VEBO | 5 | V | ||
| Collector Current | -IC | 100 | mA | ||
| Peak Collector Current | -ICM | 200 | mA | ||
| Power Dissipation | Ptot | 200 | mW | ||
| Junction Temperature | Tj | 150 | C | ||
| Storage Temperature Range | Tstg | -65 to +150 | C | ||
Characteristics at Ta = 25 C
| Parameter | Symbol | Min. | Max. | Unit | Notes |
|---|---|---|---|---|---|
| DC Current Gain (-VCE = 5 V, -IC = 2 mA) | hFE | 110 | 220 | - | Group A |
| DC Current Gain (-VCE = 5 V, -IC = 2 mA) | hFE | 200 | 450 | - | Group B |
| DC Current Gain (-VCE = 5 V, -IC = 2 mA) | hFE | 420 | 800 | - | Group C |
| Collector Base Cutoff Current (-VCB = 30 V) | -ICBO | - | 15 | nA | - |
| Collector Base Breakdown Voltage (-IC = 10 A) | -V(BR)CBO | 80 | - | V | BC856 |
| Collector Base Breakdown Voltage (-IC = 10 A) | -V(BR)CBO | 50 | - | V | BC857, BC860 |
| Collector Base Breakdown Voltage (-IC = 10 A) | -V(BR)CBO | 30 | - | V | BC858, BC859 |
| Collector Emitter Breakdown Voltage (-IC = 10 A) | -V(BR)CES | 80 | - | V | BC856 |
| Collector Emitter Breakdown Voltage (-IC = 10 A) | -V(BR)CES | 50 | - | V | BC857, BC860 |
| Collector Emitter Breakdown Voltage (-IC = 10 A) | -V(BR)CES | 30 | - | V | BC858, BC859 |
| Collector Emitter Breakdown Voltage (-IC = 10 mA) | -V(BR)CEO | 65 | - | V | BC856 |
| Collector Emitter Breakdown Voltage (-IC = 10 mA) | -V(BR)CEO | 45 | - | V | BC857, BC860 |
| Collector Emitter Breakdown Voltage (-IC = 10 mA) | -V(BR)CEO | 30 | - | V | BC858, BC859 |
| Emitter Base Breakdown Voltage (-IE = 1 A) | -V(BR)EBO | 5 | - | V | - |
| Collector Emitter Saturation Voltage (-IC = 10 mA, -IB = 0.5 mA) | -VCE(sat) | - | 0.3 | V | - |
| Collector Emitter Saturation Voltage (-IC = 100 mA, -IB = 5 mA) | -VCE(sat) | - | 0.65 | V | - |
| Base Emitter On Voltage (-IC = 2 mA, -VCE = 5 V) | -VBE(on) | 0.6 | - | V | - |
| Base Emitter On Voltage (-IC = 10 mA, -VCE = 5 V) | -VBE(on) | 0.75 | 0.82 | V | - |
| Current Gain Bandwidth Product (-VCE = 5 V, -IC = 10 mA, f = 100 MHz) | fT | 100 | - | MHz | - |
| Output Capacitance (-VCB = 10 V, f = 1 MHz) | Cob | - | 6 | pF | - |
| Noise Figure (-IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz) | NF | - | 4 | dB | BC856, BC857, BC858 |
| Noise Figure (-IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30 ~15 KHz) | NF | - | 2 | dB | BC859, BC860 |
Marking Code
| TYPE | MARKING | TYPE | MARKING |
|---|---|---|---|
| 856A | 3A | 859B | 4A |
| 856B | 3B | 859C | 4B |
| 856C | 3C | 860A | 4C |
| 857A | 3E | 860B | 4E |
| 857B | 3F | 860C | 4F |
| 857C | 3G | - | - |
| 858A | 3J | - | - |
| 858B | 3K | - | - |
| 858C | 3L | - | - |
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
2507081835_Slkor-BC860B_C49309302.pdf
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