Siliup SP40P08TH P Channel MOSFET 40V Designed for Load Switching and Low On Resistance Performance
Product Overview
The SP40P08TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching, featuring low gate charge and low RDS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40P08
- Package: TO-252
Technical Specifications
| Product Summary | ||
| V(BR)DSS | RDS(on)TYP | ID |
| -40V | 8.9m @ -10V 13m @ -4.5V | -45A |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||
| Parameter | Symbol | Rating | Units |
| Drain-Source Voltage | VDS | -40 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current (TC=25) | ID | -45 | A |
| Continuous Drain Current (TC=100) | ID | -30 | A |
| Pulsed Drain Current | IDM | -180 | A |
| Single Pulse Avalanche Energy1 | EAS | 169 | mJ |
| Power Dissipation (TC=25) | PD | 85 | W |
| Thermal Resistance Junction-to-Case | RJC | 1.47 | /W |
| Storage Temperature Range | TSTG | -55 to 150 | |
| Operating Junction Temperature Range | TJ | -55 to 150 | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Parameter | Symbol | Conditions | Typ. | Unit |
| Static Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V, VGS=0V, TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1.6 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-10A | 8.9 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-8A | 13 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=-20V, VGS=0V, f=1MHz | 3800 | pF |
| Output Capacitance | Coss | VDS=-20V, VGS=0V, f=1MHz | 329 | pF |
| Reverse Transfer Capacitance | Crss | VDS=-20V, VGS=0V, f=1MHz | 289 | pF |
| Total Gate Charge | Qg | VDS=-20V, VGS=-10V, ID=-20A | 69 | nC |
| Gate-Source Charge | Qgs | VDS=-20V, VGS=-10V, ID=-20A | 11 | nC |
| Gate-Drain Charge | Qgd | VDS=-20V, VGS=-10V, ID=-20A | 13 | nC |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDD=-20V, VGS=-10V, RG=3, ID=-20A | 11 | nS |
| Rise Time | Tr | VDD=-20V, VGS=-10V, RG=3, ID=-20A | 81 | nS |
| Turn-Off Delay Time | td(off) | VDD=-20V, VGS=-10V, RG=3, ID=-20A | 95 | nS |
| Fall Time | Tf | VDD=-20V, VGS=-10V, RG=3, ID=-20A | 73 | nS |
| Diode Characteristics | ||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | -45 | A | |
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 21 | nS |
| Reverse Recovery Charge | Qrr | IS=-20A, di/dt=100A/us, TJ=25 | 12 | nC |
| TO-252 Package Information | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP40P08TH_C41355193.pdf
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