Siliup SP40P08TH P Channel MOSFET 40V Designed for Load Switching and Low On Resistance Performance

Key Attributes
Model Number: SP40P08TH
Product Custom Attributes
Pd - Power Dissipation:
85W
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.9mΩ@10V;13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 P-Channel
Output Capacitance(Coss):
329pF
Input Capacitance(Ciss):
3.8nF
Gate Charge(Qg):
69nC@10V
Mfr. Part #:
SP40P08TH
Package:
TO-252-2L
Product Description

Product Overview

The SP40P08TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching, featuring low gate charge and low RDS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 40P08
  • Package: TO-252

Technical Specifications

Product Summary
V(BR)DSS RDS(on)TYP ID
-40V 8.9m @ -10V
13m @ -4.5V
-45A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Parameter Symbol Rating Units
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (TC=25) ID -45 A
Continuous Drain Current (TC=100) ID -30 A
Pulsed Drain Current IDM -180 A
Single Pulse Avalanche Energy1 EAS 169 mJ
Power Dissipation (TC=25) PD 85 W
Thermal Resistance Junction-to-Case RJC 1.47 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Parameter Symbol Conditions Typ. Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -40 V
Drain-Source Leakage Current IDSS VDS=-32V, VGS=0V, TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS, ID =-250uA -1.6 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-10A 8.9 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-8A 13 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-20V, VGS=0V, f=1MHz 3800 pF
Output Capacitance Coss VDS=-20V, VGS=0V, f=1MHz 329 pF
Reverse Transfer Capacitance Crss VDS=-20V, VGS=0V, f=1MHz 289 pF
Total Gate Charge Qg VDS=-20V, VGS=-10V, ID=-20A 69 nC
Gate-Source Charge Qgs VDS=-20V, VGS=-10V, ID=-20A 11 nC
Gate-Drain Charge Qgd VDS=-20V, VGS=-10V, ID=-20A 13 nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=-20V, VGS=-10V, RG=3, ID=-20A 11 nS
Rise Time Tr VDD=-20V, VGS=-10V, RG=3, ID=-20A 81 nS
Turn-Off Delay Time td(off) VDD=-20V, VGS=-10V, RG=3, ID=-20A 95 nS
Fall Time Tf VDD=-20V, VGS=-10V, RG=3, ID=-20A 73 nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IS=-1A, TJ=25 1.2 V
Maximum Body-Diode Continuous Current IS -45 A
Reverse Recovery Time Trr IS=-20A, di/dt=100A/us, TJ=25 21 nS
Reverse Recovery Charge Qrr IS=-20A, di/dt=100A/us, TJ=25 12 nC
TO-252 Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP40P08TH_C41355193.pdf
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