Power Switching MOSFET Siliup SP40N01HTQ 40V N Channel Device with TO 220 3L Package and Low RDS
Key Attributes
Model Number:
SP40N01HTQ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
200A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
309W
Gate Charge(Qg):
138nC@10V
Mfr. Part #:
SP40N01HTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP40N01HTQ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. The device is housed in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N01HTQ
- Channel Type: N-Channel
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | RDS(on) | @10V | 1.9 | m | ||
| Continuous Drain Current | ID | 200 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain source voltage | VDS | (Ta=25) | 40 | V | ||
| Gate source voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous drain current (Tc=25) | ID | Silicon Limit | 435 | A | ||
| Continuous drain current (Tc=25) | ID | Package Limit | 200 | A | ||
| Continuous drain current (Tc=100) | ID | 140 | A | |||
| Pulsed drain current | IDM | 800 | A | |||
| Single pulsed avalanche energy | EAS | 711 | mJ | |||
| Power dissipation (Tc=25) | PD | 309 | W | |||
| Thermal resistance, junction-case | RJC | 0.4 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 1.9 | 2.35 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 9263 | - | pF |
| Output Capacitance | Coss | - | 650 | - | ||
| Reverse Transfer Capacitance | Crss | - | 640 | - | ||
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 138 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | ||
| Gate-Drain Charge | Qgd | - | 31 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=2.7, ID=30A | - | 26 | - | ns |
| Rise Time | Tr | - | 30 | - | ||
| Turn-Off Delay Time | Td(off) | - | 59 | - | ||
| Fall Time | Tf | - | 19 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 200 | A | |
| Reverse recover time | Trr | ISD=190A, di/dt=100A/us, Tj=25 | - | 53 | - | ns |
| Reverse recovery charge | Qrr | - | 29 | - | nC | |
Note: EAS is tested at starting TJ = 25, VDD=75V, VGS = 10V, L = 0.5mH, Rg=25;
Package Information (TO-220-3L)
| Symbol | Dimensions (mm) | |
|---|---|---|
| Min. | Max. | |
| A | 2.700 | 2.900 |
| B | 6.400 | 6.800 |
| C | 0.300 | 0.700 |
| D | 11 | 15 |
| E | 1.1 | 1.5 |
| F | 0.7 | 0.9 |
| G | 2.54TYP | |
| W | 9.8 | 10.2 |
| H | 4.3 | 4.7 |
| H1 | 2.2 | 2.5 |
| K | 2.7 | 3.1 |
| L | 14.8 | 16.8 |
| L1 | 9.0 | 9.4 |
| N | 1.2 | 1.4 |
| P | 12.7 | 13.3 |
| P1 | 7.6 | 8.2 |
| Q | 3.5 | 3.7 |
2506271720_Siliup-SP40N01HTQ_C49257235.pdf
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