Low r dson 40 volt p channel mosfet Siliup SP40P25P8 designed for power switching and high frequency
Key Attributes
Model Number:
SP40P25P8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8.5A
RDS(on):
25mΩ@10V;35mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
102pF
Number:
-
Output Capacitance(Coss):
134pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.415nF
Gate Charge(Qg):
11.5nC@4.5V
Mfr. Part #:
SP40P25P8
Package:
SOP-8
Product Description
Product Overview
The SP40P25P8 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P25P8
- Device Code: 40P25
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -40 | V | ||||
| RDS(on) | @-10V | 25 | 35 | m | ||
| RDS(on) | @-4.5V | 35 | 45 | m | ||
| ID | -8.5 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -8.5 | A | |||
| Pulsed Drain Current | IDM | -34 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 25 | mJ | |||
| Power Dissipation | PD | 1.5 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 83.3 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | - | 25 | 35 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | - | 35 | 45 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1415 | - | pF |
| Output Capacitance | Coss | - | 134 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 102 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-1A | - | 11.5 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | ||
| Gate-Drain Charge | Qg | - | 3.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-1A | - | 22 | - | nS |
| Rise Time | Tr | - | 15.7 | - | ||
| Turn-Off Delay Time | Td(off) | - | 59 | - | ||
| Fall Time | Tf | - | 5.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Marking | 40P25 | |||||
| Order Information | SP40P25P8 | SOP-8L | 4000 | Unit/Tape | ||
Note: 1 The EAS test condition is VDD=-20V, VG=-10V, L=0.5mH, Rg=25
SOP-8L Package Dimensions (In Millimeters):
| Symbol | Dimensions | Min. | Max. |
|---|---|---|---|
| A | 1.35 | 1.75 | |
| A1 | 0.10 | 0.25 | |
| A2 | 1.35 | 1.55 | |
| b | 0.33 | 0.51 | |
| c | 0.17 | 0.25 | |
| D | 4.80 | 5.00 | |
| e | 1.27 | REF. | |
| E | 5.80 | 6.20 | |
| E1 | 3.80 | 4.00 | |
| L | 0.40 | 1.27 | |
| 0 | 8 |
2504101957_Siliup-SP40P25P8_C41355201.pdf
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