power management N channel MOSFET Siliup SP20N11KNQ with low on resistance and ESD protection up to 2KV
Key Attributes
Model Number:
SP20N11KNQ
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@4.5V;20mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
129pF
Number:
1 N-channel
Output Capacitance(Coss):
228pF
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
982pF
Gate Charge(Qg):
8.7nC@4.5V
Mfr. Part #:
SP20N11KNQ
Package:
PDFN-6L(2x2)
Product Description
Product Overview
The SP20N11KNQ is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It features low on-resistance (11m at 4.5V, 20m at 2.5V) and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is ESD protected up to 2KV and is available in a PDFN22-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Device Code: 20N11K
- Package: PDFN22-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance | RDS(on) | @4.5V | 11 | 23 | m | |
| @2.5V | 20 | 38 | m | |||
| Continuous Drain Current | ID | 9 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 9 | A | |||
| Pulsed Drain Current | IDM | 36 | A | |||
| Power Dissipation | PD | 2.1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 59.5 | /W | |||
| Operating Junction Temperature Range | TSTG | -55 | +150 | |||
| Storage Temperature Range | TJ | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 0.4 | 0.65 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =4A | - | 11 | 23 | m |
| VGS =2.5V, ID =3A | - | 20 | 38 | m | ||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 982 | - | pF |
| Output Capacitance | Coss | - | 228 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 129 | - | pF | |
| Total Gate Charge | Qg | VDS =10V,VGS=4.5V,ID =7A | - | 8.7 | - | nC |
| Gate-Source Charge | Qgs | - | 2.5 | - | ||
| Gate-Drain Charge | Qg | - | 3.1 | - | ||
| Turn-On Delay Time | Td(on) | VDD=10V, VGS=4.5V , RG=3, ID=1A | - | 1.3 | - | nS |
| Rise Time | Tr | - | 2.5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28 | - | ||
| Fall Time | Tf | - | 8 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| PDFN2X2-6L Package Information | |||||
|---|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. | |
| A | 0.70 | 0.75 | 0.80 | ||
| A1 | 0.02 | 0.05 | |||
| b | 0.25 | 0.30 | 0.35 | ||
| b1 | 0.20REF | ||||
| c | 0.203REF | ||||
| D | 1.90 | 2.00 | 2.10 | ||
| D1 | 0.08 | 0.125 | 0.18 | ||
| D2 | 0.85 | 0.90 | 0.95 | ||
| D3 | 0.25 | 0.30 | 0.35 | ||
| D4 | 0.33 | 0.375 | 0.43 | ||
| e | 0.65BSC | ||||
| Nd | 1.30BSC | ||||
| E | 1.90 | 2.00 | 2.10 | ||
| E2 | 0.95 | 1.00 | 1.05 | ||
| E3 | 0.55 | 0.60 | 0.65 | ||
| L | 0.20 | 0.25 | 0.30 | ||
| h | 0.25REF | ||||
2504101957_Siliup-SP20N11KNQ_C41354845.pdf
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